Impact of crystal size and tunnel dielectric on semiconductor nanocrystal memory performance

IEEE Transactions on Electron Devices

Volumn 50, Issue 9, 2003, Pages 1934-1940

  She, Min ^a   King, Tsu Jae ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Coulomb blockade; Dielectric; Direct tunneling; DRAM; High K; Nanocrystal; Nonvolatile memory; Programming; Quantum confinement; Retention; Trap

Indexed keywords

COULOMB BLOCKADE; CRYSTAL STRUCTURE; DIELECTRIC PROPERTIES; DYNAMIC RANDOM ACCESS STORAGE; ELECTRON TUNNELING; NANOTECHNOLOGY; QUANTUM ELECTRONICS; QUANTUM THEORY; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DEVICE MODELS;

CRYSTAL SIZE; GERMANIUM NANOCRYSTAL MEMORY; NONVOLATILE MEMORY; QUANTUM CONFINEMENT; SEMICONDUCTOR NANOCRYSTAL MEMORY; TUNNEL DIELECTRIC;

SEMICONDUCTOR DEVICE TESTING;

EID: 0041409576     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.816525     Document Type: Article

References (17)

1. Y. King, "Thin dielectric technology and memory devices," Ph.D. dissertation, Univ. California, Berkeley, CA, 1999.
2. S. Tiwari, F. Rana, K. Chan, H. Hanafi, W. Chan, and D. Buchanan, "Volatile and nonvolatile memories in silicon with nano-crystal storage," in IEDM Tech. Dig., 1995, p. 521.
3. I. Kim, S. Han, K. Han, J. Lee, and H. Shin, "Room temperature single electron effects in a Si nano-crystal memory," IEEE Electron Device Lett., vol. 20, pp. 630-631, Dec. 1999.
4. x," in IEDM Tech. Dig., 1998, p. 115.
5. H. Grabert and M. H. Devoret, Single Charge Tunneling: Coulomb Blockade Phenomena in Nanostructures. New York: Plenum, 1992.
6. Quantum mechanicalCV simulator [Online]. Available: http://www-device.eecs.berkeley.edu/research.html
7. J. D. Jackson, Classical Electrodynamics. New York: Wiley, 1975.
8. T. Takagahara and K. Takeda, "Theory of the quantum confinement effect on excitons in quantum dots of indirect-gap materials," Phys. Rev. B, vol. 46, p. 15 578, 1992.
9. Y. Niquet, G. Allan, C. Delerue, and M. Lannoo, "Quantum confinement in germanium nanocrystals," Appl. Phys. Lett., vol. 77, p. 1182, 2000.
10. 1 Excitons in Ge Nanocrystals," unpublished.
11. S. Y. Ren, "Quantum confinement in semiconductor Ge quantum dots," Solid State Commun., vol. 102, p. 479, 1997.
12. B. De Salvo et al., "Experimental and theoretical investigation of nonvolatile memory data-retention," IEEE Trans. Electron Devices, vol. 46, pp. 1518-1524, July 1999.
13. Y. Shi, private communication.
14. E. H. Nicollian, MOS Physics and Technology. New York: Wiley, 1982.
15. M. She et al., "JVD silicon nitride as tunnel dielectric in P-channel flash memory," IEEE Electron Device Lett., vol. 23, pp. 91-93, Feb. 2002.
16. D. W. Kim, F. E. Prins, T. Kim, D. L. Kwong, and S. Banerjee, "Charge retention characteristics of SiGe quantum dot flash memories," in Proc. 60th Device Res. Conf., 2002.
17. B. Govoreanu, P. Blomme, M. Rosmeulen, J. Van Houdt, and K. De Meyer, "VARIOT: A novel multilayer tunnel barrier concept for low-voltage nonvolatile memory devices," IEEE Electron Device Lett., vol. 24, pp. 99-101, Feb. 2003.