Nonvolatile Si quantum memory with self-aligned doubly-stacked dots

IEEE Transactions on Electron Devices

Volumn 49, Issue 8, 2002, Pages 1392-1398

  Ohba, Ryuji ^b   Sugiyama, Naoharu ^b   Uchida, Ken ^a,b   Koga, Junji ^b   Toriumi, Akira ^a,c  

^a IEEE

^b TOSHIBA CORPORATION   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

Coulomb blockade; Doubly stacked; Memory; Nanocrystal; Nonvolatile; Quantum confinement; Quantum dot; Self align; Si

Indexed keywords

COULOMB BLOCKADE; CURRENT VOLTAGE CHARACTERISTICS; GATES (TRANSISTOR); LEAKAGE CURRENTS; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR STORAGE;

CHARGE RETENTION; DOT SCALING; QUANTUM CONFINEMENT; QUANTUM MEMORY; TUNNEL OXIDES;

SEMICONDUCTING SILICON;

EID: 0036685431     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.801296     Document Type: Article

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