Flash memory and beyond

2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers

Volumn , Issue , 2005, Pages 84-87

  Bez, Roberto ^a   Cappelletti, Paolo ^a  

^a STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 27144541505     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VTSA.2005.1497090     Document Type: Conference Paper

References (12)

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2. "Flash Memories", edited by Cappelletti P., Golla C., Olivo P., Zanoni E., Kluwer Academic Publishers, 1999
3. Mukherjee S. et al., "A single transistor EEPROM cell and its implementation in a 512K CMOS EEPROM", IEDM Tec. Dig., p 616, 1985
4. Kynett V.N. et al., "An in-system reprogrammable 256K CMOS Flash memory2, ISSCC Conf. Proc., p. 132, 1988
5. Masuoka F. et al., "New ultra high density EPROM and Flash with NAND structure cell", IEDM Tech. Dig., p.552, 1987
6. J.H.Park et al., "8Gb MLC (Multi-Level Cell) NAND Flash Memory using 63nm Process technology", IEDM Tech. Dig., 2004
7. M.Bauer, et al., "A multilevel-cell 32 Mb Flash memory", ISSCC Dig. Tech. Dig., pp. 132-133, 1995
8. R.Bez, A.Pirovano, "Non-volatile memory technologies: emerging concepts and new materials", Material Science in Semiconductor Processing, Elsevier, v.7, pp.349-355, 3004
9. A. Pirovano et al., "Scaling analysis of phase-change memory technology", IEDM Tech. Dig., p.699, 2003
10. S. Lai, "Current Status of the Phase Change Memory and its Future", IEDM Tech. Dig., pp. 255-259, 2003
11. W.Y. Cho et al., "A 0.18 um 3.0V 64 Mb NV Phase-Transition Random-Access Memory (PRAM)", ISSCC Tech. Digest, p.40, 2004
12. F. Pellizzer et al., "Novel uTrench Phase-Change Memory Cell for Embedded and Stand-Alone Non-Volatile Memory Applications", Symp. on VLSI Technology, 2004