High performance multi-bit nonvolatile HfO2 nanocrystal memory using spinodal phase separation of hafnium silicate

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 1080-1082

  Lin, Yu Hsien ^a   Chien, Chao Hsin ^b   Lin, Ching Tzung ^a   Chen, Ching Wei ^a   Chang, Chun Yen ^a   Lei, Tan Fu ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; ELECTRON ENERGY LEVELS; HAFNIUM COMPOUNDS; HIGH RESOLUTION ELECTRON MICROSCOPY; NANOSTRUCTURED MATERIALS; OXIDES; OXYGEN; PHASE SEPARATION; RAPID THERMAL ANNEALING; SILICATES; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY; HAFNIUM OXIDES; NANOCRYSTALS; SEMICONDUCTOR STORAGE;

CHARGE MIGRATION; GATE PATTERNING; NANOCRYSTALS; RETENTION TIME;

DATA STORAGE EQUIPMENT; SILICA;

AVERAGE SIZE; HAFNIUM SILICATES; HF SILICATE; MULTI-BITS; NANOCRYSTAL MEMORY; NONVOLATILE; NOVEL TECHNIQUES; PERFORMANCE; SILICATE THIN FILMS; SPINODALS;

EID: 21644477399     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. T. Sugizaki et al., Symp. on VLSI Technol., pp.27-28, 2003.
2. R. Muralidhar et al., IEDM Technical Digest, pp. 26.2.1-26.2.4, 2003.
3. Chungho Lee et al., IEDM Technical Digest, pp. 22.6.1-22.6.4, 2003
4. T. Baron et al., Appl. Phys. Lett. 83, pp. 1444, 2003.