Novel SiO2/AlN/HfAlO/IrO2 memory with fast erase, large ΔVth and good retention

Digest of Technical Papers - Symposium on VLSI Technology

Volumn 2005, Issue , 2005, Pages 210-211

  Lai, C H ^a,b   Chin, Albert ^a,b   Chiang, K C ^a   Yoo, W J ^b   Cheng, C F ^a   McAlister, S P ^c   Chi, C C ^d   Wu, P ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^d NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; ELECTRON TRAPS; HAFNIUM COMPOUNDS; IRIDIUM COMPOUNDS; LEAKAGE CURRENTS; SILICA; VANADIUM COMPOUNDS;

FAST ERASE; HIGH WORKFUNCTION; MEMORY INTEGRITY; SIO2/ALN/HFALO/IRO2;

DATA STORAGE EQUIPMENT;

EID: 33745134383     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2005.1469271     Document Type: Conference Paper

References (6)

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