Piezoelectric actuation of (GaN/)AlGaN/GaN heterostructures

Journal of Applied Physics

Volumn 104, Issue 8, 2008, Pages

  Tonisch, K ^a   Buchheim, C ^a   Niebelschutz F ^a   Schober, A ^a   Gobsch, G ^a   Cimalla, V ^b   Ambacher, O ^b   Goldhahn, R ^a  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS; ELECTRIC FIELDS; ELECTRON GAS; GALLIUM ALLOYS; GALLIUM NITRIDE; MODULATION; PIEZOELECTRICITY; SEMICONDUCTING GALLIUM; TWO DIMENSIONAL;

ACTIVE LAYERS; ACTIVE REGIONS; AL CONTENTS; ALGAN FILMS; ALGAN/GAN; ALGAN/GAN HETEROSTRUCTURES; APPLIED VOLTAGES; BACK ELECTRODES; CONDUCTING CHANNELS; ELECTROMECHANICAL PROPERTIES; ELECTROREFLECTANCE SPECTROSCOPIES; EXPERIMENTAL TECHNIQUES; EXTERNAL VOLTAGES; FIELD DISTRIBUTIONS; GAN CAP LAYERS; GAN CAPS; GAN LAYERS; HETEROSTRUCTURES; HOLE GASSES; IMPROVED RELIABILITIES; MODULATION VOLTAGES; PIEZOELECTRIC ACTUATIONS; PIEZOELECTRIC FORCE MICROSCOPIES; PIEZOELECTRIC MODULUS; PIEZOELECTRIC RESPONSES; TWO TYPES;

TWO DIMENSIONAL ELECTRON GAS;

EID: 55249084415     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3005885     Document Type: Article

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