Effects of hydrostatic and uniaxial stress on the Schottky barrier heights of Ga-polarity and N-polarity n-GaN

Applied Physics Letters

Volumn 84, Issue 12, 2004, Pages 2112-2114

  Liu, Y ^a   Kauser, M Z ^a   Nathan, M I ^a   Ruden, P P ^a   Dogan, S ^b   Morkoc H ^b   Park, S S ^c   Lee, K Y ^c  

^a UNIVERSITY OF MINNESOTA   (United States)

^b Virginia Commonwealth University   (United States)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

HARMONIC STRESS; UNIAXIAL STRESS;

BAND STRUCTURE; ELECTRIC CONTACTS; HYDROSTATIC PRESSURE; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; PIEZOELECTRICITY; POLARIZATION; STRESSES; THERMAL EFFECTS; THERMIONIC EMISSION;

GALLIUM NITRIDE;

EID: 1942476899     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1689392     Document Type: Article

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