Current versus voltage characteristics of GaNAlGaNGaN double heterostructures with varying AlGaN thickness and composition under hydrostatic pressure

Journal of Applied Physics

Volumn 103, Issue 6, 2008, Pages

  Steinke, I P ^a   Ruden, P P ^a   Ni, X ^b   Morko H ^b   Son, K A ^c  

^a University of Minnesota   (United States)

^b Virginia Commonwealth University   (United States)

^c CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; GALLIUM NITRIDE; HYDROSTATIC PRESSURE; METALLORGANIC VAPOR PHASE EPITAXY; PRESSURE EFFECTS; SAPPHIRE; SENSITIVITY ANALYSIS; THICKNESS MEASUREMENT;

ORGANOMETALLIC VAPOR PHASE EPITAXY; OVERGROWTH; PRESSURE SENSITIVITY;

HETEROJUNCTIONS;

EID: 41549102075     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2844484     Document Type: Article

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