Influence of excitons and electric fields on the dielectric function of GaN: Theory and experiment

Physical Review B - Condensed Matter and Materials Physics

Volumn 74, Issue 12, 2006, Pages

  Winzer, A T ^a   Gobsch, G ^a   Goldhahn, R ^a   Fuhrmann, D ^b   Hangleiter, A ^b   Dadgar, A ^c   Krost, A ^c  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^c OTTO VON GUERICKE UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33749017352     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.74.125207     Document Type: Article

References (39)

1. K. Kornitzer, T. Ebner, K. Thonke, R. Sauer, C. Kirchner, V. Schwegler, M. Kamp, M. Leszczynski, I. Grzegory, and S. Porowski, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.60.1471 60, 1471 (1999).
2. B. Gil, in Gallium Nitride (GaN) II, edited by, J. I. Pankove, and, T. D. Moustakas, (Academic Press, New York, 1999), pp. 209-273.
3. D. F. Blossey, Phys. Rev. B PLRBAQ 0556-2805 10.1103/PhysRevB.2.3976 2, 3976 (1970).
4. J. D. Dow and D. Redfield, Phys. Rev. B PLRBAQ 0556-2805 10.1103/PhysRevB.1.3358 1, 3358 (1970).
5. L. Schultheis and I. Balslev, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.28.2292 28, 2292 (1983).
6. P. Trautman, K. Pakula, R. Bozek, and J. Baranowski, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1622788 83, 3510 (2003).
7. S. Shokhovets, D. Fuhrmann, R. Goldhahn, G. Gobsch, O. Ambacher, M. Hermann, and U. Karrer, Phys. Status Solidi A PSSABA 0031-8965 10.1002/1521-396X(200212)194:2<480::AID-PSSA480>3.0.CO;2-J 194, 480 (2002).
8. A. Oberhofer, J. Muth, M. Johnson, Z. Chen, E. Fleet, and G. Cooper, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1615675 83, 2748 (2003).
9. F. Binet, J. Y. Duboz, E. Rosencher, F. Scholz, and V. Härle, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.54.8116 54, 8116 (1996).
10. S. Shokhovets, G. Gobsch, and O. Ambacher, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1906313 86, 161908 (2005).
11. Yu. M. Sirenko, J. B. Jeon, B. C. Lee, K. W. Kim, M. A. Littlejohn, M. A. Stroscio, and G. J. Iafrate, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.55. 4360 55, 4360 (1997).
12. For example, see S. L. Chuang, Physics of Optoelectronic Devices (Wiley, New York, 1995).
13. R. J. Elliott, Phys. Rev. PHRVAO 0031-899X 10.1103/PhysRev.108.1384 108, 1384 (1957).
14. S. Wolfram, The Mathematica Book (Wolfram Media, Champaign, 2003).
15. For example, see P. Harrison, Quantum Wells, Wires and Dots (Wiley, New York, 2000).
16. W. Franz, Z. Naturforsch. A ZENAAU 0044-3166 13, 484 (1958).
17. L. V. Keldysh, Sov. Phys. JETP SPHJAR 0038-5646 7, 788 (1958).
18. C. Buchheim, R. Goldhahn, M. Rakel, C. Cobet, N. Esser, U. Rossow, D. Fuhrmann, and A. Hangleiter, Phys. Status Solidi B PSSBBD 0370-1972 10.1002/pssb.200541265 242, 2610 (2005).
19. I. Vurgaftman and J. R. Meyer, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1600519 94, 3675 (2003).
20. A. S. Barker and M. Ilegems, Phys. Rev. B PLRBAQ 0556-2805 10.1103/PhysRevB.7.743 7, 743 (1973).
21. Y. Goldberg, in Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe, edited by, M. E. Levinshtein,,, S. L. Rumyantsev,, and, S. M. Shur, (Wiley, New York, 2001), pp. 31-47.
22. D. F. Blossey, Phys. Rev. B PLRBAQ 0556-2805 10.1103/PhysRevB.3.1382 3, 1382 (1971).
23. F. L. Lederman and J. D. Dow, Phys. Rev. B PLRBAQ 0556-2805 10.1103/PhysRevB.13.1633 13, 1633 (1976).
24. A. T. Winzer, R. Goldhahn, G. Gobsch, A. Link, M. Eickhoff, U. Rossow, and A. Hangleiter, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1923748 86, 181912 (2005).
25. J. D. Dow and D. Redfield, Phys. Rev. B PLRBAQ 0556-2805 10.1103/PhysRevB.5.594 5, 594 (1972).
26. S. Shokhovets, D. Fuhrmann, R. Goldhahn, G. Gobsch, O. Ambacher, M. Hermann, U. Karrer, and M. Eickhoff, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1561160 82, 1712 (2003).
27. A. T. Winzer, R. Goldhahn, G. Gobsch, A. Dadgar, H. Witte, A. Krtschil, and A. Krost, Superlattices Microstruct. SUMIEK 0749-6036 10.1016/j.spmi.2004. 09.025 36, 693 (2005).
28. A. Winzer, R. Goldhahn, G. Gobsch, A. Dadgar, A. Krost, O. Weidemann, M. Stutzmann, and M. Eickhoff, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2161394 88, 024101 (2006).
29. S. Shokhovets, R. Goldhahn, and G. Gobsch, Mater. Sci. Eng., B MSBTEK 0921-5107 10.1016/S0921-5107(02)00031-4 93, 215 (2002).
30. D. E. Aspnes and A. A. Studna, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.7.4605 7, 4605 (1973).
31. B. O. Seraphin and N. Bottka, Phys. Rev. PHRVAO 0031-899X 10.1103/PhysRev.145.628 145, 628 (1966).
32. L. Schultheis and J. Lagois, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.29.6784 29, 6784 (1984).
33. U. Behn and H. Röppischer, Phys. Status Solidi B PSSBBD 0370-1972 141, 325 (1987).
34. O. Ambacher, J. Majewski, C. Miskys, A. Link, M. Hermann, M. Eickhoff, M. Stutzmann, F. Bernardini, V. Fiorentini, V. Tilak, B. Schaff, and L. F. Eastman, J. Phys.: Condens. Matter JCOMEL 0953-8984 10.1088/0953-8984/14/13/302 14, 3399 (2002).
35. D. E. Aspnes, Phys. Rev. B PLRBAQ 0556-2805 10.1103/PhysRevB.10.4228 10, 4228 (1974).
36. L. Chen, B. J. Skromme, R. F. Dalmau, R. Schlesser, Z. Sitar, C. Chen, W. Sun, J. Yang, M. A. Khan, M. L. Nakarmi, J. Y. Lin, and H.-X. Jiang, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1818733 85, 4334 (2004).
37. P. Carrier and S.-H. Wei, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1849425 97, 033707 (2005).
38. B. Jogai, Phys. Status Solidi B PSSBBD 0370-1972 10.1002/pssb.200301952 241, 952 (2004).
39. A. Jaeger and G. Weiser, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.58.10674 58, 10674 (1998).