Multifunctional nanomechanical systems via tunably coupled piezoelectric actuation

Science

Volumn 317, Issue 5839, 2007, Pages 780-783

  Masmanidis, Sotiris C ^a   Karabalin, Rassul B ^a   De Vlaminck, Iwijn ^b   Borghs, Gustaaf ^b   Freeman, Mark R ^c   Roukes, Michael L ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b IMEC   (Belgium)

^c UNIVERSITY OF ALBERTA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHY; PIEZOELECTRICITY;

ARTICLE; CRYSTALLOGRAPHY; ELECTRIC FIELD; ELECTRIC POTENTIAL; ELECTRON TRANSPORT; EXCITATION; MOLECULAR INTERACTION; MOLECULAR MECHANICS; PIEZOELECTRICITY; PRIORITY JOURNAL; SEMICONDUCTOR; YOUNG MODULUS;

EID: 34547869562     PISSN: 00368075     EISSN: 10959203     Source Type: Journal    
DOI: 10.1126/science.1144793     Document Type: Article

References (30)

1. M. L. Roukes, Phys. World 14, 25 (2001).
2. J. Fritz et al., Science 288, 316 (2000).
3. Y. T. Yang, C. Calegari, X. L. Feng, K. L. Ekinci, M. L. Roukes, Nano Lett. 6, 583 (2006).
4. M. D. LaHaye, O. Buu, B. Camarota, K. C. Schwab, Science 304, 74 (2004).
5. A. N. Cleland, M. L. Roukes, Nature 392, 160 (1998).
6. W. C. Fon, K. C. Schwab, J. M. Worlock, M. L. Roukes, Nano Lett. 5, 1968 (2005).
7. K. L. Ekinci, Small 1, 786 (2005).
8. I. Bargatin, I. Kozinsky, M. L. Roukes, Appl. Phys. Lett. 90, 093116 (2007).
9. P. Curie, J. Curie, Bull. Soc. Minéral. Fr. 3, 90 (1880).
10. Pin diode junctions were used because of their high electrical resistance, which is required for efficient actuation, and convenience in modeling voltage-dependent charge-depletion effects.
11. Materials and methods are available as supporting material on Science Online.
12. D. W. Carr, H. G. Craighead, J. Vac. Sci. Technol. B15, 2760 (1997).
13. K. Fricke, J. Appl. Phys. 70, 914 (1991).
14. The actual measured current in the low-bias regime was typically between 0.001 and 1 μA per 20 mV, which would lead to an even lower estimate of power consumption.
15. B. Piekarski, D. Devoe, M. Dubey, R. Kaul, J. Conrad, Sens. Actuat. A 91, 313 (2001).
16. S. Timoshenko, D. H. Young, W. Weaver, Vibration Problems in Engineering (Wiley, New York, ed. 4, 1974).
17. S. C. Jun et al., Nanotechnology 17, 1506 (2006).
18. D. Rugar, P. Grütter, Phys. Rev. Lett. 67, 699 (1991).
19. C. H. Metzger, K. Karrai, Nature 432, 1002 (2004).
20. It is important to distinguish the total induced charge, which is dominated by the parasitic capacitance of the gold-wire-bond contact pads (and is much greater than 500 electronic charges per 10 mV of bias), from the charge on the NEMS device. The phase-locked-loop sampling rate was set to 10 Hz.
21. One would ideally like to make devices as thin as possible to maximize charge sensitivity (see Eq. 1). However, surface-depletion effects in GaAs place practical constraints on this dimension.
22. T. Rueckes et al., Science 289, 94 (2000).
23. The small disparity between the response to a drive at input A and the response to input B is believed to be due to symmetry-breaking device inhomogeneities introduced during fabrication.
24. M. L. Roukes, Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International (Institute of Electrical and Electronics Engineers, Piscataway, NJ, 2004) pp. 539-542.
25. M. C. Lonergan et al., Chem. Mater. 8, 2298 (1996).
26. D. Devoe, Sens. Actuat. A 88, 263 (2001).
27. R. G. Beck, M. A. Eriksson, R. M. Westervelt, K. L. Campman, A. C. Gossard, Appl. Phys. Lett. 68, 3763 (1996).
28. Y. Zhang, M. P. Blencowe, J. Appl. Phys. 92, 7550 (2002).
29. R. Knobel, A. N. Cleland, Appl. Phys. Lett. 81, 2258 (2002).
30. This work was supported by the Defense Advanced Research Projects Agency Microsystems Technology Office Micro Gas Analyzer through Department of Interior contract no. NBCH1050001. We thank W. van de Graaf and S. Degroote for the epitaxial crystal deposition and P. Van Dorpe and J. M. Choi for discussions.