Effect of hydrostatic pressure on the dc characteristics of AlGaN/GaN heterojunction field effect transistors

Applied Physics Letters

Volumn 88, Issue 1, 2006, Pages

  Liu, Y ^a   Ruden, P P ^a   Xie, J ^b   Morkoc H ^b   Son, K A ^c  

^a University of Minnesota   (United States)

^b Virginia Commonwealth University   (United States)

^c CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT-VOLTAGE CHARACTERISTICS; POLARIZATION CHARGE DENSITY;

HETEROJUNCTIONS; HYDROSTATIC PRESSURE; PIEZOELECTRICITY; POLARIZATION; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SENSORS; SUBSTRATES; THRESHOLD VOLTAGE;

FIELD EFFECT TRANSISTORS;

EID: 33645523950     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2161812     Document Type: Article

References (15)

1. S. Karmalkar, M. S. Shur, and R. Gaska, Wide Energy Bandgap Electronic Devices (World Scientific, Singapore, 2003), Chap. 3.
2. Y. Guhel, B. Boudart, V. Hoel, M. Werquin, C. Gaquiere, J. C. De Jaeger, M. A. Poisson, I. Daumiller, and E. Kohn, Microwave Opt. Technol. Lett. 34, 4 (2002).
3. S. Heikman, S. Keller, Y. Wu, J. S. Speck, S. P. Denbaars, and U. K. Mishra, J. Appl. Phys. 93, 10114 (2003).
4. B. S. Kang, G. Louche, R. S. Duran, Y. Gnanou, S. J. Pearton, and F. Ren, Solid-State Electron. 48, 851 (2004).
5. J. Schalwig, G. Müller, M. Eickhoff, O. Ambacher, and M. Stutzmann, Mater. Sci. Eng., B 93, 207 (2002).
6. M. Eickhoff, O. Ambacher, G. Krötz, and M. Stutzmann, J. Appl. Phys. 90, 3383 (2001).
7. B. S. Kang, S. Kim, F. Ren, J. W. Johnson, R. J. Therrien, P. Rajagopal, J. C. Roberts, E. L. Piner, K. J. Linthicum, S. N. G. Chu, K. Baik, B. P. Gila, C. R. Abernathy, and S. J. Pearton, Appl. Phys. Lett. 85, 2962 (2004).
8. J. D. Albrecht, P. P. Ruden, S. C. Binari, and M. G. Ancona, IEEE Trans. Electron Devices 47, 2031 (2000).
9. M. S. Shur, GaAs Devices and Circuits (Plenum, New York, 1987).
10. Y. Chang, K. Y. Tong, and C. Surya, Semicond. Sci. Technol. 20, 188 (2005).
11. T. H. Chen, Ph.D. thesis, University of Minnesota, 1984.
12. W. Shan, J. W. Ager III, K. M. Yu, W. Walukiewicz, E. E. Haller, M. C. Martin, W. R. McKinney, and W. Yang, J. Appl. Phys. 85, 8505 (1999).
13. A. Zoroddu, F. Bernardini, P. Ruggerone, and V. Fiorentini, Phys. Rev. B 64, 045208 (2001).
14. V. Fiorentini, F. Berdardini, and O. Ambacher, Appl. Phys. Lett. 80, 1204 (2002).
15. Y. Liu, M. Z. Kauser, M. I. Nathan, P. P. Ruden, S. Dogan, H. Morkoç, S. S. Park and K. Y. Lee, Appl. Phys. Lett. 84, 2112 (2004). Our recent unpublished results show the increase of barrier height to be higher for AlGaN.