Effects of hydrostatic and uniaxial stress on the conductivity of p-type GaN epitaxial layer

Applied Physics Letters

Volumn 81, Issue 18, 2002, Pages 3398-3400

  Liu, Y ^a   Kauser, M Z ^a   Nathan, M I ^a   Ruden, P P ^a   Dabiran, A M ^b   Hertog, B ^b   Chow, P P ^b  

^a University of Minnesota   (United States)

^b Superior Vacuum Technology Associates Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BASAL PLANES; DEFORMATION POTENTIAL; ELECTRICAL CONDUCTIVITY; MG-DOPED; P-TYPE GAN; SAPPHIRE SUBSTRATES; STRESS DIRECTIONS; UNIAXIAL STRESS;

ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; GALLIUM NITRIDE; HYDRAULICS; HYDROSTATIC PRESSURE; MOLECULAR BEAM EPITAXY; SAPPHIRE;

HYDRODYNAMICS;

EID: 79956003078     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1517713     Document Type: Article

References (8)

1. R. Gaska, M. S. Shur, A. D. Bykhovski, J. W. Yang, M. A. Khan, V. V. Kaminski, and S. M. Soloviov, Appl. Phys. Lett. 76, 3956 (2000). apl APPLAB 0003-6951
2. A. K. Fung, J. D. Albrecht, M. I. Nathan, P. P. Ruden, and H. Shtrikman, J. Appl. Phys. 84, 3741 (1998). jap JAPIAU 0021-8979
3. A. Polian, M. Grimsditch, and I. Grzegory, J. Appl. Phys. 79, 3343 (1996). jap JAPIAU 0021-8979
4. J. F. Nye, Physical Properties of Crystals (Clarendon, Oxford, 1985).
5. G. L. Bir and G. E. Pikus, Symmetry and Strain-Induced Effects in Semiconductors (Wiley, New York, 1974).
6. G. B. Ren, Y. M. Liu, and P. Blood, Appl. Phys. Lett. 74, 1117 (1999). apl APPLAB 0003-6951
7. M. Suzuki and T. Uenoyama, Group III Nitride Semiconductor Compounds: Physics and Application (Oxford University Press, New York, 1998), p. 307.
8. J. D. Albrecht, P. P. Ruden, and T. L. Reinecke, J. Appl. Phys. 92, 3803 (2002). jap JAPIAU 0021-8979