Bias induced strain in AlGaN/GaN heterojunction field effect transistors and its implications

Applied Physics Letters

Volumn 88, Issue 20, 2006, Pages

  Anwar, A F M ^a,b   Webster, Richard T ^b   Smith, Kurt V ^c  

^a University of Connecticut   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROMECHANICAL COUPLING; HETEROJUNCTION FIELD EFFECT TRANSISTORS; MOLE FRACTION; PIEZOELECTRIC POLARIZATION;

CONCENTRATION (PROCESS); ELECTRIC CHARGE; ELECTRON GAS; HETEROJUNCTIONS; PIEZOELECTRIC DEVICES; POLARIZATION;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 33646874218     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2203739     Document Type: Article

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