Piezoelectric GaN sensor structures

IEEE Electron Device Letters

Volumn 27, Issue 5, 2006, Pages 309-312

  Zimmermann, Tom ^a   Neuburger, M ^a,b   Benkart, P ^a   Hernandez Guillen F J ^a   Pietzka, C ^a   Kunze, M ^c   Daumiller, I ^c   Dadgar, A ^d   Krost, A ^d   Kohn, E ^a  

^a UNIVERSITY OF ULM   (Germany)

^b ROBERT BOSCH GMBH   (Germany)

^c MicroGaN GmbH   (Germany)

^d OTTO VON GUERICKE UNIVERSITY   (Germany)

Author keywords

AIGaN GaN; Cantilever; Microelectromechanical system (MEMS); Piezoresistor; Polarization; Sensor

Indexed keywords

DRY ETCHING; ELASTIC MODULI; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; INTERFACES (MATERIALS); MICROELECTROMECHANICAL DEVICES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SENSORS; SUBSTRATES;

CANTILEVER BENDING; HETEROSTRUCTURE INTERFACE; PIEZORESISTOR;

PIEZOELECTRIC DEVICES;

EID: 33646265263     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.872918     Document Type: Article

References (23)

1. M. Eickhoff, J. Schalwig, G. Steinhoff, O. Weidemann, L. Görgens, R. Neuberger, M. Hermann, B. Baur, G. Müller, O. Ambacher, and M. Stutzmann, "Electronics and sensors based pyroelectric AlGaN/GaN heterostructures, Part B: Sensor applications," Phys. Stat. Sol. C, vol. 0, no. 6, pp. 1908-1918, 2003.
2. 2 (100) for nanoelectromechanical systems," Appl. Phys. Lett., vol. 84, no. 23, pp. 4756-4758, Jun. 2004.
3. R. Gaska, J. W. Yang, A. D. Bykhovski, M. S. Shur, V. V. Kaminskii, and S. Soloviov, "Piezoresistive effect in GaN-AlN-GaN structures," Appl. Phys. Lett., vol. 71, no. 26, pp. 3817-3819, Dec. 1997.
4. S. Davies, T. S. Huang, M. H. Gass, A. J. Papworth, T. B. Joyce, and P. R. Chalker, "Fabrication of GaN cantilevers on silicon substrates for microelectromechanical devices," Appl. Phys. Lett., vol. 84, no. 14, pp. 2566-2568, Apr. 2004.
5. R. P. Strittmatter, R. A. Beach, G. S. Picus, and T. C. McGill, "Piezoelectrically enhanced capacitive strain sensors using GaN metal-insulator-semiconductor diodes," J. Appl. Phys., vol. 94, no. 9, pp. 5958-5963, Nov. 2003.
6. Y.-R. Wu and J. Singh, "Metal piezoelectric semiconductor field effect transistors for piezoelectric strain sensors," Appl. Phys. Lett., vol. 85, no. 7, pp. 1223-1225, Aug. 2004.
7. B. S. Kang, S. Kim, J. Kim, F. Ren, K. Baik, S. J. Pearton, B. P. Gila, C. R. Abernathy, C.-C. Pan, G.-T. Chen, J.-I. Chyi, V. Chandrasekaran, M. Sheplak, T. Nishida, and S. N. G. Chu, "Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors," Appl. Phys. Lett., vol. 83, no. 23, pp. 4845-4847, Dec. 2003.
8. A. D. Bykhovski, V. V. Kaminski, M. S. Shur, Q. C. Chen, and M. A. Khan, "Piezoresistive effect in wurtzite n-type GaN," Appl. Phys. Lett., vol. 68, no. 6, pp. 818-819, Feb. 1996.
9. L. Jiang, M. Hassan, A. J. Harris, J. S. Burdess, C. A. Zorman, M. Mehregany, and R. Cheung, "Fabrication of SiC microelectromechanical systems using one-step dry etching," J. Vac. Sci. Technol. B, Microelectron. Process. Phenom., vol. 21, no. 6, pp. 2998-3001, Nov. 2003.
10. B. S. Kang, J. Kim, S. Jang, F. Ren, J. W. Johnson, R. J. Therrien, P. Rajagopal, J. C. Roberts, E. L. Piner, K. J. Linthicum, S. N. G. Chu, K. Baik, B. P. Gila, C. R. Abernathy, and S. J. Pearton, "Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane," Appl. Phys. Lett., vol. 86, no. 25, pp. 253502-1-253502-3, Jun. 2005.
11. 3 single crystals," J. Micromech. Microeng., vol. 12, no. 1, pp. 53-57, Jan. 2002.
12. A. Krost and A. Dadgar, "GaN based devices on Si," Phys. Stat. Sol. A, vol. 194, no. 2, pp. 361-375, 2002.
13. D. Jena, S. Heikman, D. Green, D. Buttari, R. Coffie, H. Xing, S. Keller, S. Denbaars, J. S. Speck, I. Smorchkova, and U. K. Mishra, "Realization of wide electron slabs by polarization bulk doping in graded III-V nitride semiconductor alloys," Appl. Phys. Lett., vol. 81, no. 23, pp. 4395-4397, Dec. 2002.
14. J.-Q. Wang, Z.-Q. Gu, M.-F. Li, and W.-Y. Lai, "Intervalley Γ - X de-formation potentials in III-V zinc-blende semiconductors by ab initio pseudopotential calculations," Phys. Rev. B, Condens. Matter, vol. 46, no. 19, pp. 12358-12364, Nov. 1992.
15. A. Dadgar, A. Strittmatter, J. Bläsing, M. Poschenrieder, O. Contreras, P. Veit, T. Riemann, F. Bertram, A. Reiher, A. Krtschil, A. Diez, T. Hempel, T. Finger, A. Kasic, M. Schubert, D. Bimberg, F. A. Ponce, J. Christen, and A. Krost, "Metalorganic chemical vapor phase epitaxy of gallium-nitride on silicon," Phys. Stat. Sol. C, vol. 0, no. 6, pp. 1583-1606, 2003.
16. A. Krost, A. Dadgar, G. Strassburger, and R. Clos, "GaN-based epitaxy on silicon: Stress measurements," Phys. Stat. Sol. A, vol. 200, no. 1, pp. 26-35, 2003.
17. S. Heikman, S. Keller, S. P. Denbaars, and U. K. Mishra, "Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition," Appl. Phys. Lett., vol. 81, no. 3, pp. 439-441, Jul. 2002.
18. I. Daumiller, P. Schmid, E. Kohn, C. Kirchner, M. Kamp, K. J. Ebeling, L. L. Pond, and C. Weitzel, "DC and RF characteristics of AlN/GaN doped channel heterostructure field effect transistor," Electron. Lett., vol. 35, no. 18, pp. 1588-1590, Sep. 1999.
19. I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, "Band parameters for III-V compound semiconductors and their alloys," J. Appl. Phys., vol. 89, no. 11, pp. 5815-5875, Jun. 2001.
20. M. Stutzmann, G. Steinhoff, M. Eickhoff, O. Ambacher, C. E. Nebel, J. Schalwig, R. Neuberger, and G. Müller, "GaN-based heterostructures for sensor applications," Diamond Relat. Mater., vol. 11, no. 3-6, pp. 886-891, 2002.
21. B. S. Kang, J. Kim, F. Ren, J. W. Johnson, R. J. Therrien, P. Rajagopal, J. C. Roberts, E. L. Piner, K. J. Linthicum, S. N. G. Chu, K. Baik, B. P. Gila, C. R. Abernathy, and S. J. Pearton, "Pressure-induced changes in the conductivity of AlGaN/GaN high-electron mobility-transistor membranes," Appl. Phys. Lett., vol. 85, no. 14, pp. 2962-2964, Oct. 2004.
22. 1-xN/GaN heterostructures," J. Appl. Phys., vol. 90, no. 7, pp. 3383-3386, Oct. 2001.
23. A. D. Carlo, F. D. Sala, P. Lugli, V. Fiorentini, and F. Bernadini, "Doping screening of polarization fields in nitride heterostructures," Appl. Phys. Lett., vol. 76, no. 26, pp. 3950-3952, Jun. 2000.