Growth and simulation of high-aspect ratio nanopillars by primary and secondary electron-induced deposition

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 6, 2005, Pages 2825-2832

  Fowlkes, J D ^a   Randolph, S J ^a   Rack, P D ^a  

^a University of Tennessee Knoxville   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM ENERGY; ELECTRON BEAM INDUCED DEPOSITION (EBID); NANOPILLARS; PRIMARY ELECTRONS (PE);

ASPECT RATIO; BACKSCATTERING; COMPUTER SIMULATION; DEPOSITION; DISSOCIATION; ELECTRON BEAMS; GROWTH KINETICS; MONTE CARLO METHODS; THREE DIMENSIONAL;

NANOSTRUCTURED MATERIALS;

EID: 29044446431     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2101732     Document Type: Article

References (56)

1. T. Liang, A. Stivers, R. Livengood, P. Y. Yan, G. Zhang, and F. C. Lo, J. Vac. Sci. Technol. B 18, 3216 (2000).
2. T. Liang and A. Stivers, Proc. SPIE 4688, 375 (2002).
3. S. Matsui and Y. Ochiai, Nanotechnology 7, 247 (1996).
4. J. Melngailis, Proc. SPIE 1465, 36 (1991).
5. J. S. Ro, C. V. Thompson, and J. Melngailis, J. Vac. Sci. Technol. B 12, 73 (1994).
6. T. Tao, W. Wilkinson, and J. Melngailis, J. Vac. Sci. Technol. B 9, 162 (1991).
7. A. D. Dubner, A. Wagner, J. Melngalilis, and C. V. Thompson, J. Appl. Phys. 70, 665 (1991).
8. J. C. Gonzalez, D. P. Griffis, T. T. Miau, and P. E. Russell, J. Vac. Sci. Technol. B 19, 2539 (2001).
9. K. Gamo, D. Takehara, Y. Hamamura, M. Tomita, and S. Namba, Microelectron. Eng. 5, 163 (1986).
10. Y. Fu, N. Kok, A. Bryan, and O. N. Shing, Sens. Actuators, A 88, 58 (2001).
11. A. N. Broers, W. W. Molzen, J. J. Cuomo, and N. D. Wittels, Appl. Phys. Lett. 29, 596 (1976).
12. Y. Darici, P. H. Holloway, J. Sebastian, T. Trottier, S. Jones, and J. Rodriquez, J. Vac. Sci. Technol. A 17, 692 (1999).
13. M.-Y. Yen, C.-W. Chiu, F.-R. Chen, J.-J. Kai, C.-Y. Lee, and H.-T. Chiu, Langmuir 20, 279 (2004).
14. R. R. Kunz and T. M. Mayer, J. Vac. Sci. Technol. B 6, 1557 (1988).
15. K. L. Lee and M. Hatzakis, J. Vac. Sci. Technol. A 7, 1941 (1989).
16. I. Utke, P. Hoffmann, B. Dwir, K. Leifer, E. Kapon, and P. Doppelt, J. Vac. Sci. Technol. B 18, 3168 (2000).
17. A. Folch, J. Tejada, C. H. Peters, and M. S. Wrighton, Appl. Phys. Lett. 66, 2080 (1995).
18. K. Molhave, D. N. Madsen, A. M. Rasmussen, A. Carlsson, C. C. Appel, M. Brorson, C. J. H. Jacobsen, and P. Boggild, Nano Lett. 3, 1499 (2003).
19. R. R. Kunz, T. E. Allen, and T. M. Mayer, J. Vac. Sci. Technol. B 5, 1427 (1987).
20. R. R. Kunz and T. M. Mayer, Appl. Phys. Lett. 50, 962 (1987).
21. S. Matsui and M. Mito, Appl. Phys. Lett. 53, 1492 (1988).
22. S. Lipp, L. Frey, C. Lehrer, B. Frank, E. Demm, S. Pauthner, and H. Ryssel, J. Vac. Sci. Technol. B 14, 3920 (1996).
23. T. J. Stark, T. M. Mayer, D. P. Griffis, and P. E. Russel, J. Vac. Sci. Technol. B 10, 2685 (1992).
24. O. Yavas, C. Ochiai, M. Takai, A. Hosono, and S. Okuda, Appl. Phys. Lett. 76, 3319 (2000).
25. M. Takai, T. Kishimoto, H. Morimoto, Y. K. Park, S. Lipp, C. Lehrer, L. Frey, H. Ryssel, A. Hosono, and S. Kawabuchi, Microelectron. Eng. 41/42, 453 (1998).
26. P. C. Hoyle, J. R. A. Cleaver, and H. Ahmed, Appl. Phys. Lett. 64, 1448 (1994).
27. H. W. P. Koops, R. Weiel, D. P. Kern, and T. H. Baum, J. Vac. Sci. Technol. B 6, 477 (1988).
28. P. C. Hoyle, J. R. A. Cleaver, and H. Ahmed, J. Vac. Sci. Technol. B 14, 662 (1996).
29. K. T. Kohlmann-von Platen, J. Chiebek, M. Weiss, K. Reimer, H. Oertel, and W. H. Brunger, J. Vac. Sci. Technol. B 11, 2219 (1993).
30. R. B. Jackson and J. S. Foord, Appl. Phys. Lett. 49, 196 (1986).
31. M. Komuro and H. Hiroshima, Microelectron. Eng. 35, 273 (1997).
32. N. A. Kislov, I. I. Khodos, E. D. Ivanov, and J. Barthel, Scanning 18, 114 (1996).
33. K. T. Kohlmann, M. Thiemann, and W. H. Brunger, Microelectron. Eng. 13, 279 (1991).
34. S. Matsui and K. Mori, J. Vac. Sci. Technol. B 4, 299 (1986).
35. P. D. Rack, S. Randolph, Y. Deng, J. Fowlkes, Y. Choi, and D. C. Joy, Appl. Phys. Lett. 82, 2326 (2003).
36. K. R. V. Subramanian, M. S. M. Saifullah, E. Tapley, D.-J. Kang, M. E. Welland, and M. Butler, Nanotechnology 15, 158 (2004).
37. N. Silvis-Cividjian, C. W. Hagen, P. Kruit, M. A. J. v. d. Stam, and H. B. Groen, Microelectron. Eng. 61-62, 693 (2002).
38. K. T. Kohlmann-von Platen, J. Chlebek, M. Weiss, K. Reimer, H. Oertel, and W. H. Brunger, J. Vac. Sci. Technol. B 11, 2219 (1993).
39. H. Hiroshima and M. Komuro, Nanotechnology 9, 108 (1998).
40. H. W. P. Koops, R. Weiel, D. P. Kern, and T. H. Baum, J. Vac. Sci. Technol. B 6, 477 (1988).
41. V. Saksena, M. Kushwaha, and S. Khare, Int. J. Mass Spectrom. Ion Process. 171, L1 (1997).
42. T. Nakano, H. Toyoda, and H. Sugai, Jpn. J. Appl. Phys., Part 1 30, 2912 (1991).
43. D. A. Alman, D. N. Ruzic, and J. N. Brooks, Phys. Plasmas 7, 1421 (2000).
44. W. Lowell Morgan, C. Winstead, and V. McCoy, J. Appl. Phys. 92, 1663 (2002).
45. R. Basner, M. Schmidt, and H. Deutsch, Bull. Am. Phys. Soc. 38, 2369 (1993).
46. S. Kwitnewski, E. Ptasinska-Denga, and C. Szmytkowski, Radiat. Phys. Chem. 68, 169 (2003).
47. http://physics.nist.gov/PhysRefData/Ionization/intro.html
48. S. M. Younger, J. Quant. Spectrosc. Radiat. Transf. 26, 329 (1981).
49. Y.-K. Kim and M. E. Rudd, Phys. Rev. A 50, 3954 (1994).
50. N. Silvis-Cividjian, Electron Beam Induced Nanometer Scale Deposition, p. 138.
51. H. F. Winters and M. Inokuti, Phys. Rev. A 25, 1420 (1982).
52. D. C. Joy, Scanning Microsc. 5, 329 (1991).
53. D. C. Joy and S. Luo, Scanning 11, 176 (1989).
54. S. Luo and D. C. Joy, Scanning Microsc. 2, 1901 (1988).
55. D. C. Joy, J. Microsc. 147, 51 (1987).
56. L. Reimer and C. Tolkamp, Scanning 3, 35 (1980).