Integration of field emitters into scanning probe microscopy sensors using focused ion and electron beams

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 3, 2004, Pages 1402-1406

  Lehrer, C ^a   Frey, L ^a   Petersen, S ^a   Ryssel, H ^a   Schafer M ^b   Sulzbach, Th ^c  

^a FRAUNHOFER INSTITUTE FOR INTEGRATED CIRCUITS IIS   (Germany)

^b UNIVERSITY OF MÜNSTER   (Germany)

^c NANOWORLD SERVICES GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CONTAMINATION; DEPOSITION; ELECTRON BEAMS; ELECTRON EMISSION; ETCHING; FABRICATION; GALLIUM; GATES (TRANSISTOR); ION BEAMS; PHOTOEMISSION; RAPID THERMAL ANNEALING; SILICON; SINGLE CRYSTALS; SURFACE ROUGHNESS; SURFACE TOPOGRAPHY; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON-BEAM-INDUCED DEPOSITION; EMITTERS; ION-BEAM MILLING; MICROMECHANICAL STRUCTURING;

OPTICAL SENSORS;

EID: 3242722353     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1689310     Document Type: Conference Paper

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