Pressure effect of growing with electron beam-induced deposition with tungsten hexafluoride and tetraethylorthosilicate precursor

Scanning

Volumn 28, Issue 6, 2006, Pages 311-318

  Choi, Young R ^a   Rack, Philip D ^a   Randolph, Steven J ^b   Smith, Daryl A ^a   Joy, David C ^a,b  

^a University of Tennessee Knoxville   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

Electron beam induced deposition; Extreme ultraviolet mask; Interaction volume; Precursor gas; Scanning electron microscope

Indexed keywords

DEPOSITION; ELECTRON BEAMS; ELECTRON SCATTERING; FLUORIDE MINERALS; MONTE CARLO METHODS; PRESSURE EFFECTS; SCANNING ELECTRON MICROSCOPY; SILICATE MINERALS; TUNGSTEN COMPOUNDS;

EXTREME ULTRAVIOLET MASKS; INTERACTION VOLUME; PRECURSOR GAS;

NANOSTRUCTURED MATERIALS;

FLUORIDE; SILICON; SILICON OXIDE; TETRAETHOXYSILANE; TUNGSTEN; TUNGSTEN DERIVATIVE; TUNGSTEN HEXAFLUORIDE;

ARTICLE; ELECTRON; ELECTRON BEAM; ELECTRON BEAM INDUCED DEPOSITION; ENERGY TRANSFER; GAS; GROWTH RATE; MOLECULE; MONTE CARLO METHOD; NANOPARTICLE; PRESSURE; PRIORITY JOURNAL; SCANNING ELECTRON MICROSCOPE; TECHNIQUE; TEMPERATURE;

DEPOSITION; ELECTRON BEAMS; FLUORIDES; SCANNING ELECTRON MICROSCOPY; SILICATES; SIMULATION; TUNGSTEN;

EID: 33845475614     PISSN: 01610457     EISSN: None     Source Type: Journal    
DOI: 10.1002/sca.4950280603     Document Type: Article

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