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Volumn 602, Issue 14, 2008, Pages 2563-2574

Nucleation, growth, and deformation of one-dimensional Ge nanostructures on the Si(5 5 12)-2 × 1 surface

Author keywords

Germanium; High index single crystal surfaces; Scanning tunneling microscopy; Silicon; Surface structure, morphology, roughness and topography

Indexed keywords

ADSORPTION; ASPECT RATIO; EPITAXIAL GROWTH; MICROSCOPIC EXAMINATION; SCANNING PROBE MICROSCOPY; SCANNING TUNNELING MICROSCOPY;

EID: 48149108050     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2008.06.008     Document Type: Article
Times cited : (18)

References (92)
  • 65
    • 48149110564 scopus 로고    scopus 로고
    • note
    • User's Guide To Autoprobe VP, Park Scientific Instruments (PSI), Sunnyvale, CA, 1996, Chapter 4.
  • 80
    • 48149112199 scopus 로고    scopus 로고
    • note
    • If only one of h and k is denoted by an even number, then, the precise index of surface is not (hhk) but (2h 2h 2k).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.