Influences of the Si(1 1 3) anisotropy on Ge nanowire formation and related island shape transition

Surface Science

Volumn 497, Issue 1-3, 2002, Pages 93-99

  Zhang, Zhaohui ^a   Sumitomo, Koji ^a   Omi, Hiroo ^a   Ogino, Toshio ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

Epitaxy; Germanium; Scanning tunneling microscopy; Silicon; Surface stress; Surface structure, morphology, roughness, and topography

Indexed keywords

ANISOTROPY; NANOSTRUCTURED MATERIALS; PHASE TRANSITIONS; RELAXATION PROCESSES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR GROWTH; STIFFNESS; SUBSTRATES; SURFACE ROUGHNESS; WETTING;

SHAPE TRANSITIONS;

SEMICONDUCTING SILICON;

EID: 0037137854     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(01)01629-6     Document Type: Article

References (13)