Atomistics of Ge deposition on Si(100) by atomic layer epitaxy

Physical Review Letters

Volumn 90, Issue 4, 2003, Pages 461021-461024

  Lin, D S ^a   Wu, J L ^a   Pan, S Y ^a   Chiang, T C ^b,c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^c University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; DEPOSITION; EPITAXIAL GROWTH; INTERFACES (MATERIALS); SCANNING TUNNELING MICROSCOPY; SILICON; SUBSTRATES;

ATOMIC LAYER EPITAXY;

GERMANIUM;

EID: 4243437587     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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