Room-temperature light emission from a highly strained Si/Ge superlattice

Applied Physics Letters

Volumn 83, Issue 15, 2003, Pages 3084-3086

  Zakharov, N D ^a   Talalaev, V G ^a   Werner, P ^a   Tonkikh, A A ^b   Cirlin, G E ^c  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

^c INSTITUTE FOR ANALYTICAL INSTRUMENTATION   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; GROWTH (MATERIALS); LIGHT EMISSION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

GROWTH PARAMETERS;

SUPERLATTICES;

EID: 0242272676     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1618377     Document Type: Article

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