Dome-to-pyramid shape transition in Ge/Si islands due to strain relaxation by interdiffusion

Applied Physics Letters

Volumn 77, Issue 11, 2000, Pages 1623-1625

  Henstrom, William L ^a   Liu, Chuan Pu ^a   Gibson, J Murray ^b   Kamins, T I ^c   Williams, R Stanley ^c  

^a University of Illinois at Urbana Champaign   (United States)

^b ARGONNE NATIONAL LABORATORY   (United States)

^c HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001372348     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1309027     Document Type: Article

References (12)

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12. Please note that in the context of the techniques used here we are not able to show the Si distribution in the alloy islands directly (other TEM techniques are required and being investigated), and so composition is shown in average.