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Volumn 583, Issue 2-3, 2005, Pages 265-280
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Cyclic transformation of one-dimensional structures during homoepitaxy of Si(5 5 12)-2 × 1
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Author keywords
Epitaxy; High index single crystal surfaces; Scanning tunneling microscopy; Silicon; Surface structure, morphology, roughness and topography
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Indexed keywords
ATOMS;
COMPRESSIVE STRESS;
DIMERS;
EPITAXIAL GROWTH;
MORPHOLOGY;
PHASE TRANSITIONS;
SCANNING TUNNELING MICROSCOPY;
SINGLE CRYSTALS;
SURFACE ROUGHNESS;
TEMPERATURE DISTRIBUTION;
ULTRAHIGH VACUUM;
HIGH INDEX SINGLE CRYSTAL SURFACES;
ONE-DIMENSIONAL STRUCTURES;
ROUGHNESS AND TOPOGRAPHY;
SURFACE STRUCTURES;
SILICON COMPOUNDS;
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EID: 18844379990
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/j.susc.2005.03.044 Document Type: Article |
Times cited : (25)
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References (19)
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