Comparison of NMOS and PMOS stress for determining the source of NBTI in TiN/HfSiON devices

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2005, Pages 80-83

  Harris, H Rusty ^a   Choi, Rino ^a   Lee, B H ^b   Young, C D ^a   Sim, J H ^a   Mathews, K ^a   Zeitzoff, P ^a   Majhi, P ^a   Bersuker, G ^a  

^a SEMATECH   (United States)

^b IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 27744432931     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. Mahapatra et al., IEDM, p. 337, 2003.
2. C.D. Young, et al, IRPS, p. 597, 2004.
3. Zafar et al., EDL, v.25, p153.2004.
4. J. F. Zhang and W. Eccleston, TED, p. 116, 1998
5. D. K. Schroder and J. Babcock, JAP 94(1),p.1, 2003.
6. S. Rangan, et al, IEDM, p. 342, 2003
7. I. Gavartin, A. S. Foster, G. Bersuker, A. Shluger, submitted to JAP.