Assessment of capture cross sections and effective density of electron traps generated in silicon dioxides

IEEE Transactions on Electron Devices

Volumn 53, Issue 6, 2006, Pages 1347-1354

  Chang, Mo Huai ^a   Zhang, Jian F ^a   Zhang, Wei D ^a  

^a LIVERPOOL JOHN MOORES UNIVERSITY   (United Kingdom)

Author keywords

Defects; Gate oxides; Instabilities; Reliability; Space charges; Traps

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRIC SPACE CHARGE; GATES (TRANSISTOR); KINETIC THEORY; RELIABILITY; SILICA; STRESSES;

ACCEPTORLIKE TRAP; CAPTURE CROSS SECTIONS; ELECTRON-TRAPPING KINETICS; GATE OXIDES; STRESS LEVEL CLEAR;

ELECTRON TRAPS;

EID: 33744824415     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.874155     Document Type: Article

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