Hole trapping and trap generation in the gate silicon dioxide

IEEE Transactions on Electron Devices

Volumn 48, Issue 6, 2001, Pages 1127-1135

  Zhang, J F ^a   Sii, H K ^a   Groeseneken, Guido ^b   Degraeve, Robin ^b  

^a LIVERPOOL JOHN MOORES UNIVERSITY   (United Kingdom)

^b IMEC   (Belgium)

Author keywords

Breakdown; Defect generation; Degradation; Instability; MOS devices; Reliability; Silicon dioxides (SiO2)

Indexed keywords

CMOS INTEGRATED CIRCUITS; DEGRADATION; ELECTRON TRAPS; HOLE TRAPS; INTERFACES (MATERIALS); SILICA;

TRAP GENERATION;

MOS DEVICES;

EID: 0035368031     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.925238     Document Type: Article

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