Toward understanding the wide distribution of time scales in negative bias temperature instability

ECS Transactions

Volumn 6, Issue 3, 2007, Pages 265-281

  Kaczer, B ^a   Grasser, T ^b   Fernandez, R ^c   Groeseneken, G ^a  

^a IMEC   (Belgium)

^b INSTITUTE FOR MICROELECTRONICS   (Austria)

^c UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

DISPERSIONS; FIELD EFFECT TRANSISTORS; INSULATING MATERIALS; LOW-K DIELECTRIC; NEGATIVE TEMPERATURE COEFFICIENT; NITRIDES; PLASTIC FILMS; SILICA; SILICON NITRIDE; THERMODYNAMIC STABILITY; TIME MEASUREMENT;

CHARACTERISTIC TIME; DISPERSIVE TRANSPORT; INDIVIDUAL DEVICES; MODEL-BASED OPC; ON-CHIP CIRCUITS; TIME-SCALES; UNIVERSAL BEHAVIORS;

NEGATIVE BIAS TEMPERATURE INSTABILITY;

EID: 45849130193     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2728801     Document Type: Conference Paper

References (36)

1. D. K. Schroder and J. Babcock, J. Appl. Phys. 94, 1 (2003).
2. V. Reddy, A. T. Krishnan, A. Marshall, J. Rodriguez, S. Natarajan, T. Rost, and S. Krishnan, Proc. IRPS, 248 (2002).
3. J. Stathis and S. Zafar, Microelectr. Reliab. 46, 270 (2006).
4. M. Ershov, S. Saxena, H. Karbasi, S. Winters, S. Minehane, J. Babcock, R. Lindley, P. Clifton, M. Redford, and A. Shibkov, Appl. Phys. Lett. 83, 1647 (2003).
5. G. Chen, K. Y. Chuah, M. F. Li, D. S. H. Chan, C. H. Ang, J. Z. Zheng, Y. Jin, and D. L. Kwong, Proc. IRPS, 196 (2003).
6. S. Rangan, N. Mielke, and E. C.C. Yeh, Proc. IEDM, 341 (2003).
7. T. Yang, C. Shen, M.-F. Li, C.H. Ang, C.X. Zhu, Y.-C. Yeo, G. Samudra, S.C. Rustagi, M.B. Yu, and D.-L. Kwong, IEEE Electron Dev. Let. 26, 826 (2005).
8. B. Kaczer, V. Arkhipov, R. Degraeve, N. Collaert, G. Groeseneken, and M. Goodwin, Proc. IRPS, 381 (2005).
9. H. Reisinger, O. Blank, W. Heinrigs, A. Mühlhoff, W. Gustin, and C. Schlünder, Proc. IRPS, 448 (2006).
10. M. Denais, A. Bravaix, V. Huard, C. Parthasarathy, C. Guerin, G. Ribes, F. Perrier, M. Mairy, and D. Roy, Proc. IRPS, 735 (2006).
11. T. Grasser, W. Gös, V. Sverdlov, and B. Kaczer, accepted to IRPS 2007.
12. M. A. Alam, IEDM Tech. Digest, 345 (2003).
13. V. Huard, M. Denais, and C. Parthasarathy, Microelectr. Reliab. 46, 1 (2006).
14. B. Kaczer, V. Arkhipov, R. Degraeve, N. Collaert, G. Groeseneken, and M. Goodwin, Appl. Phys. Lett. 86, 143506 (2005).
15. S. Zafar, J. Appl. Phys. 97, 1 (2005).
16. M. Houssa, M. Aoulaiche, S. De Gendt, G. Groeseneken, M. M. Heyns, and A. Stesmans, Appl. Phys. Lett. 86, 093506 (2005).
17. M. Houssa, M. Aoulaiche, J.L. Autran, C. Parthasarathy, N. Revil, and E. Vincent, J. Appl. Phys. 95, 2786 (2004).
18. R. Fernández, B. Kaczer, A. Nackaerts, S. Demuynck, R. Rodríguez, M. Nafria, and G. Groeseneken, Proc. IEDM Tech. Digest, 337 (2006).
19. A. T. Krishnan, V. Reddy, S. Chakravarthi, J. Rodriguez, S. John, and S. Krishnan, IEDM Tech. Dig., 349 (2003).
20. Denais, A. Bravaix, V. Huard, C. Parthasarathy, G. Ribes, F. Perrier, Y. Rey-Tauriac, and N. Revil, IEDM Tech. Digest, 109 (2004).
21. Y. Mitani, H. Satake, and A. Toriumi, Proc. ECS Int. Symp. "Silicon Nitride, Silicon Dioxide Thin Films, and Other Emerging Dilectrics VIII", 340 (2005).
22. C. Shen, M.-F. Li, C. E. Foo, T. Yang, D. M. Huang, A. Yap, G. S. Samudra, Y.-C. Yeo, IEDM Tech. Digest, 333 (2006).
23. L. Tsetseris, X. J. Zhou, D. M. Fleetwood, D. R. Schrimpf, and S. T. Pantelides, Appl. Phys. Lett. 86, 142103 (2005).
24. A. Stesmans, Appl. Phys. Lett. 68, 2076 (1996).
25. T. Grasser, W. Gös, and B. Kaczer, Proc. IIRW, 5 (2006).
26. D. Varghese, D. Saha, S. Mahapatra, K. Ahmed, F. Noun, and M. Alam, IEDM Tech. Dig., 701 (2005).
27. B. Kaczer, V. Arkhipov, M. Jurczak, G. and Groeseneken, Microelectr. Reliab. 80, 122 (2005).
28. S. Chakravarthi, A.T. Krishnan, V. Reddy, C.F. Machala, and S. Krishnan, Proc. IRPS, 273 (2004).
29. K. O. Jepsson and C. M Svensson, J. Appl. Phys. 48, 2004 (1977).
30. B. Zhu, J. S. Suehle, Y. Chen, and J. B. Bernstein, Proc. IRW, 125 (2002).
31. W. Abadeer and W. Ellis, Proc. IRPS, 17 (2003).
32. T. Nigam and E. B. Harris, Proc. IRPS, 289 (2006).
33. B. Kaczer, R. Degraeve, G. Groeseneken, M. Rasras, S. Kubicek, E. Vandamme, and G. Badenes, IEDM Tech. Digest, 553 (2000).
34. Y. Wang, V. Lee, K. P. Cheung, IEDM Tech. Digest, 763 (2006).
35. G. T. Sasse and J. Schmitz, Proc. IRPS, 627 (2006).
36. H.-H. Ji et al., IEDM Tech. Digest, 721 (2005).