Achievements and challenges for the electrical performance of MOSFET's with high-k gate dielectrics

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Volumn , Issue , 2004, Pages 147-155

  Groeseneken, G ^a,b   Pantisano, L ^a   Ragnarsson, L A ^a   Degraeve, R ^a   Houssa, M ^a   Kauerauf, T ^a,b   Roussel, P ^a   De Gendt, S ^a   Heyns, M ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; GATES (TRANSISTOR); HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTIMIZATION; POLYSILICON; PROBLEM SOLVING; RELIABILITY; SILICA; THRESHOLD VOLTAGE; ZIRCONIUM COMPOUNDS;

ATOMIC LAYER CHEMICAL VAPOR DEPOSITION (ALCVD); GATE DIELECTRICS; HIGH-K DIELECTRICS; ORGANIC CONTAMINATION;

MOSFET DEVICES;

EID: 14844316722     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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