Effect of nitrogen at SiO2/Si interface on reliability issues - Negative-bias-temperature instability and fowler-nordheim-stress degradation

Applied Physics Letters

Volumn 81, Issue 23, 2002, Pages 4362-4364

  Kushida Abdelghafar, Keiko ^a   Watanabe, Kikuo ^a   Ushio, Jiro ^a   Murakami, Eiichi ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL BONDS; INTERFACES (MATERIALS); NITROGEN; SILICA;

FOWLER-NORDHEIM-STRESS DEGRADATION;

MOS DEVICES;

EID: 0037011553     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1526158     Document Type: Article

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