SCOPUS 정보 검색 플랫폼

Microelectronic Engineering

Volumn 80, Issue SUPPL., 2005, Pages 366-369

Properties and dynamic behavior of electron traps in HfO 2/SiO2 stacks

(6) Zhao, C Z a Zahid, M B a Zhang, J F a Groeseneken, G b,c Degraeve, R b De Gendt, S b

a LIVERPOOL JOHN MOORES UNIVERSITY (United Kingdom)

b IMEC (Belgium)

c UNIVERSITY OF LEUVEN (Belgium)

Author keywords

Capture cross sections; HfO2; High k dielectric; Instabilities; Space charges; Traps

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ELECTRIC SPACE CHARGE; ELECTRON TUNNELING; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; MATHEMATICAL MODELS; MOSFET DEVICES; SILICA; STACKING FAULTS; THERMAL EFFECTS;

CAPTURE CROSS SECTIONS; HFO2; HIGH-K DIELECTRICS; INSTABILITIES; TRAPS;

ELECTRON TRAPS;

EID: 19844367065 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2005.04.028 Document Type: Conference Paper

Times cited : (38)

References (9)

1
- 19844367039
- G. Groeseneken, L. Pantisano, L-Å Ragnarsson, R. Degraeve, M. Houssa, T. Kauerauf, P. Roussel, S. De Gendt and M. Heyns, in: Proc. IPFA (2004) 147.
- (2004) Proc. IPFA , pp. 147
- Groeseneken, G.¹ Pantisano, L.² Ragnarsson, L.-Å.³ Degraeve, R.⁴ Houssa, M.⁵ Kauerauf, T.⁶ Roussel, P.⁷ De Gendt, S.⁸ Heyns, M.⁹

2
- 14644421225
- A. Kerber, E. Cartier, L. Pantisano, M. Rosmeulen, R. Degraeve, T. Kauerauf, G. Groeseneken, H. E. Maes, U. Schwalke, in: Proc. of IRPS (2003) 41.
- (2003) Proc. of IRPS , pp. 41
- Kerber, A.¹ Cartier, E.² Pantisano, L.³ Rosmeulen, M.⁴ Degraeve, R.⁵ Kauerauf, T.⁶ Groeseneken, G.⁷ Maes, H.E.⁸ Schwalke, U.⁹

3
- 19944391085
- C.Leroux, J.Mitard, G.Ghibaudo, X.Carros, G.Reimbold, B. Guillaumot, F. Martin, in Proc. Of IEDM (2004) 737.
- (2004) Proc. of IEDM , pp. 737
- Leroux, C.¹ Mitard, J.² Ghibaudo, G.³ Carros, X.⁴ Reimbold, G.⁵ Guillaumot, B.⁶ Martin, F.⁷

4
- 0842288138
- R. Degraeve, A. Kerber, Ph. Roussel, E. Cartier, T. Kauerauf, L. Pantisano, and G. Groeseneken, in: Proc. of IEDM Tech. Dig. (2003) 935.
- (2003) Proc. of IEDM Tech. Dig. , pp. 935
- Degraeve, R.¹ Kerber, A.² Roussel, Ph.³ Cartier, E.⁴ Kauerauf, T.⁵ Pantisano, L.⁶ Groeseneken, G.⁷

5
- 0742321656
- W. Zhu, J.P. Han, and T.P. Ma IEEE Tran. Electron Devices 51 2004 98
- (2004) IEEE Tran. Electron Devices , vol.51 , pp. 98
- Zhu, W.¹ Han, J.P.² Ma, T.P.³

6
- 0038650830
- S. Zafar, A. Callegari, E. Gusev, and M.V. Fischetti J. Appl. Phys. 93 2003 9298
- (2003) J. Appl. Phys. , vol.93 , pp. 9298
- Zafar, S.¹ Callegari, A.² Gusev, E.³ Fischetti, M.V.⁴

7
- 33751121032
- nd IRPS (2004) 181.
- (2004) nd IRPS , pp. 181
- Crupi, F.¹ Degraeve, R.² Kerber, A.³ Kwak, D.H.⁴ Groeseneken, G.⁵

8
- 4544351365
- R. Degraeve, F. Crupi, D. H. Kwak, G. Groeseneken, in: VLSI Tech.Symp. (2004) 140.
- (2004) VLSI Tech.Symp. , pp. 140
- Degraeve, R.¹ Crupi, F.² Kwak, D.H.³ Groeseneken, G.⁴

9
- 0001763520
- J.F. Zhang, S. Taylor, and W. Eccleston J. Appl. Phys. 71 1992 725
- (1992) J. Appl. Phys. , vol.71 , pp. 725
- Zhang, J.F.¹ Taylor, S.² Eccleston, W.³

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