Effects of measurement temperature on NBTI

IEEE Electron Device Letters

Volumn 28, Issue 4, 2007, Pages 298-300

  Zhang, J F ^a   Chang, M H ^a   Groeseneken, G ^b,c  

^a LIVERPOOL JOHN MOORES UNIVERSITY   (United Kingdom)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Bias temperature instability (BTI); Defects; Degradation; Gate dielectric; Lifetime; Negative BTI (NBTI); Oxynitrides

Indexed keywords

BIAS TEMPERATURE INSTABILITY; DEFECT CREATION; LIFETIME; NEGATIVE BIAS TEMPERATURE INSTABILITY; NEGATIVE BTI (NBTI); OXYNITRIDES; P-MOSFETS; ROOM TEMPERATURE; STRESS TEMPERATURE; THERMAL ENHANCEMENT; THRESHOLD-VOLTAGE SHIFT; MEASUREMENT TEMPERATURES;

DEFECTS; DEGRADATION; GATES (TRANSISTOR); THRESHOLD VOLTAGE; GATE DIELECTRICS;

GATE DIELECTRICS; DEFECTS;

EID: 38049027478     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.893219     Document Type: Article

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