Degradation of oxides and oxynitrides under hot hole stress

IEEE Transactions on Electron Devices

Volumn 47, Issue 2, 2000, Pages 378-386

  Zhang, J F ^a   Sii, H K ^a   Groeseneken, Guido ^b   Degraeve, R ^b  

^a LIVERPOOL JOHN MOORES UNIVERSITY   (United Kingdom)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEGRADATION; ELECTRIC CURRENTS; ELECTRONIC DENSITY OF STATES; HOLE TRAPS; HOT CARRIERS; INTERFACES (COMPUTER); NITRIDES; NITRIDING; SILICA; STRESSES;

HOT HOLE INJECTION; HOT HOLE STRESS;

MOSFET DEVICES;

EID: 0033900450     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.822284     Document Type: Article

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