Band alignment of yttrium oxide on various relaxed and strained semiconductor substrates

Journal of Applied Physics

Volumn 103, Issue 8, 2008, Pages

  Chiam, S Y ^a   Chim, W K ^b   Pi, C ^b   Huan, A C H ^c   Wang, S J ^c   Pan, J S ^c   Turner, S ^a   Zhang, J ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; PHOTOEMISSION; RELAXATION PROCESSES; SUBSTRATES;

BAND OFFSETS; INTERFACIAL LAYER MODEL;

YTTRIUM OXIDE;

EID: 43049144278     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2904928     Document Type: Article

References (67)

1. J. Robertson, J. Vac. Sci. Technol. B 18, 1785 (2000). 0734-211X
2. J. Tersoff, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.52.465 52, 465 (1984).
3. J. Tersoff, Phys. Rev. B 0163-1829 10.1103/PhysRevB.30.4874 30, 4874 (1984).
4. W. Monch, Semiconductor Surfaces and Interfaces, Springer Series in Surface Science Vol. 26, 2nd ed. (Springer, Berlin, 1995), pp. 387-391.
5. M. Malvestuto, M. Pedio, S. Nannarone, G. Pavia, G. Scarel, M. Fanciulli, and F. Boscherini, J. Appl. Phys. 0021-8979 10.1063/1.2717128 101, 074104 (2007).
6. H. Nohira, T. Shiraishi, T. Nakamura, K. Takahashi, M. Takeda, S. Ohmi, H. Iwai, and T. Hattori, Appl. Surf. Sci. 216, 234 (2003). 0169-4332
7. S. Y. No, D. Eom, C. S. Hwang, and H. J. Kim, J. Appl. Phys. 0021-8979 10.1063/1.2218465 100, 024111 (2006).
8. T. Hattori, T. Yoshida, T. Shiraishi, K. Takahashi, H. Nohira, S. Joumori, K. Nakajima, M. Suzuki, K. Kimuar, I. Kashiwagi, C. Ohshima, S. Ohmi, and H. Iwai, Microelectron. Eng. 0167-9317 10.1016/j.mee.2004.01.005 72, 283 (2004).
9. Y. Y. Zhu, S. Chen, R. Xu, Z. B. Fang, J. F. Zhao, Y. L. Fan, X. J. Yang, and Z. M. Jiang, Appl. Phys. Lett. 0003-6951 10.1063/1.2196476 88, 162909 (2006).
10. V. V. Afanas'ev, A. Stesmans, L. F. Edge, D. G. Schlom, T. Heeg, and J. Schubert, Appl. Phys. Lett. 0003-6951 10.1063/1.2164432 88, 032104 (2006).
11. R. Puthenkovilakam and J. P. Chang, J. Appl. Phys. 0021-8979 10.1063/1.1778213 96, 2701 (2004).
12. S. J. Wang, A. C. H. Huan, Y. L. Foo, J. W. Chai, J. S. Pan, Q. Li, Y. F. Dong, Y. P. Feng, and C. K. Ong, Appl. Phys. Lett. 0003-6951 10.1063/1.1819988 85, 4418 (2004).
13. M. V. Fischetti, D. A. Neumayer, and E. A. Cartier, J. Appl. Phys. 0021-8979 10.1063/1.1405826 90, 4587 (2001).
14. J. Zhang, A. Arinopoulou, J. Hartung, E. C. Lightowlers, N. Anwar, G. Parry, M. H. Xie, S. M. Mokler, X. D. Wu, and B. A. Joyce, J. Vac. Sci. Technol. A 0734-2101 10.1116/1.579180 12, 1139 (1994).
15. D. A. Shirley, Many-Electron and Final-State Effects: Beyond the One Electron Picture, Topics in Applied Physics Vol. 26 (Springer-Verlag, Berlin, 1978), p. 165.
16. B. Wallbank, I. G. Main, and C. E. Johnson, J. Electron Spectrosc. Relat. Phenom. 0368-2048 10.1016/0368-2048(74)85017-6 5, 259 (1974).
17. K. S. Kim, J. Electron Spectrosc. Relat. Phenom. 0368-2048 10.1016/0368-2048(74)80012-5 3, 217 (1974).
18. M. Scrocco, Phys. Rev. B 0163-1829 10.1103/PhysRevB.32.1301 32, 1301 (1985).
19. M. Scrocco, Phys. Rev. B 32, 1306 (1985). 0163-1829
20. S. Miyazaki, M. Narasaki, A. Suyama, M. Yamaoka, and H. Murakami, Appl. Surf. Sci. 216, 252 (2003). 0169-4332
21. S. Miyazaki, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.1418405 19, 2212 (2001).
22. S. Toyoda, J. Okabayashi, H. Kumigashira, M. Oshima, G. L. Liu, Z. Liu, K. Ikeda, and K. Usuda, Appl. Phys. Lett. 0003-6951 10.1063/1.2035894 87, 102901 (2005).
23. M. Shioji, T. Shiraishi, K. Takahashi, H. Nohira, K. Azuma, Y. Nakata, Y. Takata, S. Shin, K. Kobayashi, and T. Hattori, Appl. Phys. Lett. 0003-6951 10.1063/1.1737793 84, 3756 (2004).
24. F. G. Bell and L. Ley, Phys. Rev. B 0163-1829 10.1103/PhysRevB.37.8383 37, 8383 (1988).
25. E. A. Kraut, R. W. Grant, J. R. Waldrop, and S. P. Kowalczyk, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.44.1620 44, 1620 (1980).
26. E. A. Kraut, R. W. Grant, J. R. Waldrop, and S. P. Kowalczyk, Phys. Rev. B 0163-1829 10.1103/PhysRevB.28.1965 28, 1965 (1983).
27. M. Moreno, M. Alonso, J. L. Sacedon, M. Horicke, R. Hey, K. Horn, and K. H. Ploog, Phys. Rev. B 61, 16060 (2000). 0163-1829
28. K. Horn, Appl. Surf. Sci. 166, 1 (2000). 0169-4332
29. K. Horn, M. Moreno, M. Alonson, M. Horicke, R. Hey, J. L. Sacedon, and K. H. Ploog, Vacuum 0042-207X 10.1016/S0042-207X(02)00198-7 67, 115 (2002).
30. S. A. Chambers, T. Droubay, T. C. Kaspar, and M. Gutowski, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.1768525 22, 2205 (2004).
31. A. Ohta, M. Yamaoka, and S. Miyazaki, Microelectron. Eng. 0167-9317 10.1016/j.mee.2003.12.030 72, 154 (2004).
32. M. Perego, G. Seguini, G. Scarel, and M. Fanciulli, Surf. Interface Anal. 0142-2421 10.1002/sia.2268 38, 494 (2006).
33. S. A. Chambers, Y. Liang, Z. Yu, R. Droopad, and J. Ramdani, J. Vac. Sci. Technol. A 0734-2101 10.1116/1.1365132 19, 934 (2001).
34. Q. Li, S. J. Wang, K. B. Li, A. C. H. Huan, J. W. Chai, J. S. Pan, and C. K. Ong, Appl. Phys. Lett. 0003-6951 10.1063/1.1839287 85, 6155 (2004).
35. Y. Y. Mi, S. J. Wang, J. W. Chai, J. S. Pan, A. C. H. Huan, M. Ning, and C. K. Ong, Appl. Phys. Lett. 0003-6951 10.1063/1.2387986 89, 202107 (2006).
36. H. Jin, S. K. Oh, H. J. Kang, and S. W. Lee, Appl. Phys. Lett. 0003-6951 10.1063/1.2133918 87, 212902 (2005).
37. H. Y. Yu, M. F. Li, B. J. Cho, C. C. Yeo, M. S. Joo, D. L. Kwong, J. S. Pan, C. H. Ang, J. Z. Zheng, and S. Ramanathan, Appl. Phys. Lett. 0003-6951 10.1063/1.1492024 81, 376 (2002).
38. J. W. Keister, J. E. Rowe, J. J. Kolodziej, H. Niimi, and T. E. Madey, J. Vac. Sci. Technol. B 17, 1831 (1999). 0734-211X
39. N. T. Barrett, O. Renault, P. Besson, Y. Le Tiec, and F. Martin, Appl. Phys. Lett. 0003-6951 10.1063/1.2196235 88, 162906 (2006).
40. T. E. Cook, Jr., C. C. Fulton, W. J. Mecouch, K. M. Tracy, R. F. Davis, E. H. Hurt, G. Lucovsky, and R. J. Nemanich, J. Appl. Phys. 0021-8979 10.1063/1.1559424 93, 3995 (2003).
41. S. Sayan, T. Emge, E. Garfunkel, X. Zhao, L. Wielunski, R. A. Bartynski, D. Vanderbilt, J. S. Suehle, S. Suzer, and M. Banaszak-Holl, J. Appl. Phys. 0021-8979 10.1063/1.1803107 96, 7485 (2004).
42. S. J. Wang, J. W. Chai, J. S. Pan, and A. C. H. Huan, Appl. Phys. Lett. 0003-6951 10.1063/1.2220531 89, 022105 (2006).
43. A. Sandell, P. G. Karlsson, J. H. Richter, J. Blomquist, P. Uvdal, and T. M. Grehk, Appl. Phys. Lett. 0003-6951 10.1063/1.2190073 88, 132905 (2006).
44. Y. Y. Mi, Z. Yu, S. J. Wang, P. C. Lim, Y. L. Foo, A. C. H. Huan, and C. K. Ong, Appl. Phys. Lett. 0003-6951 10.1063/1.2736277 90, 181925 (2007).
45. L. F. Edge, D. G. Schlom, S. A. Chambers, E. Cicerrella, J. L. Freeouf, B. Hollander, and J. Schubert, Appl. Phys. Lett. 0003-6951 10.1063/1.1644055 84, 726 (2004).
46. A. T. Kobayashi, O. Maida, M. Inoue, M. Takahashi, Y. Todokoro, and H. Kobayashi, Appl. Phys. Lett. 0003-6951 10.1063/1.1517723 81, 3410 (2002).
47. V. A. Gritsenko, H. Wong, W. M. Kwok, and J. B. Xu, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.1540989 21, 241 (2003).
48. S. Zhang and R. Xiao, J. Appl. Phys. 0021-8979 10.1063/1.366615 83, 3842 (1998).
49. S. A. Chambers, Y. Liang, Z. Yu, R. Droopad, J. Ramdani, and K. Eisenbeiser, Appl. Phys. Lett. 0003-6951 10.1063/1.1310209 77, 1662 (2000).
50. E. T. Yu, E. T. Croke, T. C. McGill, and R. H. Miles, Appl. Phys. Lett. 0003-6951 10.1063/1.102747 56, 569 (1990).
51. F. Schaffler, in Properties of Advance Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe, edited by, M. E. Levinshtein, S. L. Rumyantsev, and, M. S. Shur, (Wiley, United Kingdom, 2001), p. 149.
52. L. F. Yang, J. R. Watling, R. C. W. Wilkins, M. Borici, J. R. Barker, A. Asenov, and S. Roy, Semicond. Sci. Technol. 0268-1242 10.1088/0268-1242/19/10/ 002 19, 1174 (2004).
53. J. Weber and M. I. Alonso, Phys. Rev. B 0163-1829 10.1103/PhysRevB.40. 5683 40, 5683 (1989).
54. S. M. Sze, Semiconductor Devices: Physics and Technology (Wiley, New York, 1985).
55. D. J. Robbins, L. T. Canham, S. J. Barnett, A. D. Pitt, and P. Calcott, J. Appl. Phys. 0021-8979 10.1063/1.351262 71, 1407 (1992).
56. C. G. Van de Walle and R. M. Martin, Phys. Rev. B 0163-1829 10.1103/PhysRevB.34.5621 34, 5621 (1986).
57. J. Eberhardt and E. Kasper, Mater. Sci. Eng., B 0921-5107 10.1016/S0921-5107(01)00808-X 89, 93 (2002).
58. M. M. Rieger and P. Vogl, Phys. Rev. B 0163-1829 10.1103/PhysRevB.48. 14276 48, 14276 (1993).
59. R. People, IEEE J. Quantum Electron. 0018-9197 10.1109/JQE.1986.1073152 22, 1696 (1986).
60. The value shown is the average value observed for all 17 nm thick Y2 O3 on various substrates.
61. The value is taken from subtracting the experimental band gap from the valence band maximum measured in Singapore Synchrotron Light Source by using 60 eV photon energy with -5 V applied bias (relative to the analyzer) on 17 nm thick Y2 O3 on Si (bulk).
62. W. Monch, Appl. Phys. Lett. 0003-6951 10.1063/1.2760176 91, 042117 (2007).
63. R. A. McKee, F. J. Walker, M. B. Nardelli, W. A. Shelton, and G. M. Stocks, Science 0036-8075 10.1126/science.1083894 300, 1726 (2003).
64. S. Kera, Y. Yabuuchi, H. Yamane, H. Setoyama, K. K. Okudaira, A. Kahn, and N. Ueno, Phys. Rev. B 0163-1829 10.1103/PhysRevB.70.085304 70, 085304 (2004).
65. M. Peressi, S. Baroni, R. Resta, and A. Baldereschi, Phys. Rev. B 0163-1829 10.1103/PhysRevB.43.7347 43, 7347, (1991).
66. Y. F. Dong, S. J. Wang, J. W. Chai, Y. P. Feng, and A. C. H. Huan, Appl. Phys. Lett. 0003-6951 10.1063/1.1891285 86, 132103 (2005).
67. J. W. P. Hsu, E. A. Fitzgerald, Y. H. Xie, P. J. Silverman, and M. J. Cardillo, Appl. Phys. Lett. 61, 1295 (1992). 0003-6951