Bandgap narrowing in strained SiGe on the basis of electrical measurements on Si/SiGe/Si hetero bipolar transistors

Materials Science and Engineering: B

Volumn 89, Issue 1-3, 2002, Pages 93-96

  Eberhardt, J ^a   Kasper, E ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

Bandgap narrowing; Hetero bipolar transistor; SiGe

Indexed keywords

CARRIER MOBILITY; ELECTRIC PROPERTIES; ENERGY GAP; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY;

BANDGAP NARROWING;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0037074794     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)00808-X     Document Type: Conference Paper

References (11)