X-ray photoelectron spectroscopy study on SiO2/Si interface structures formed by three kinds of atomic oxygen at 300°C

Applied Physics Letters

Volumn 84, Issue 19, 2004, Pages 3756-3758

  Shioji, M ^a   Shiraishi, T ^a   Takahashi, K ^a   Nohira, H ^a   Azuma, K ^b   Nakata, Y ^b   Takata, Y ^c   Shin, S ^c   Kobayashi, K ^d   Hattori, T ^a  

^a TOKYO CITY UNIVERSITY   (Japan)

^b Advanced LCD Technologies Development Center Co Ltd   (Japan)

^c RIKEN   (Japan)

^d JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRON ENERGY LOSS SPECTROSCOPY; EPITAXIAL GROWTH; FILM GROWTH; HIGH TEMPERATURE EFFECTS; KINETIC ENERGY; KRYPTON; OXYGEN; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICA; SILICON; SYNCHROTRON RADIATION; X RAY PHOTOELECTRON SPECTROSCOPY;

FULL WIDTH AT HALF MAXIMUM (FWHM); GATE DIELECTRICS; PHOTON ENERGIES; XENON EXCIMER LAMPS;

INTERFACES (MATERIALS);

EID: 2942578190     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1737793     Document Type: Article

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