Si/SiGe heterostructure parameters for device simulations

Semiconductor Science and Technology

Volumn 19, Issue 10, 2004, Pages 1174-1182

  Yang, Lianfeng ^a   Watling, Jeremy R ^a   Wilkins, Richard C W ^a   Boriçi, Mirela ^a   Barker, John R ^a   Asenov, Asen ^a   Roy, Scott ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CHARGE CARRIERS; CHARGE TRANSFER; COMPUTER SIMULATION; INTERFACES (MATERIALS); MATHEMATICAL MODELS; SILICON ALLOYS;

CARRIER TRANSPORT; DEVICE SIMULATIONS; EFFECTIVE TRANSPORT MASSES;

HETEROJUNCTIONS;

EID: 5444231545     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/10/002     Document Type: Article

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