Properties of lanthanum oxide thin films deposited by cyclic chemical vapor deposition using tris(isopropyl-cyclopentadienyl)lanthanum precursor

Journal of Applied Physics

Volumn 100, Issue 2, 2006, Pages

  No, Sang Yong ^a,b   Eom, Dail ^a,b   Hwang, Cheol Seong ^a,b   Kim, Hyeong Joon ^a,b  

^a Seoul National University   (South Korea)

^b Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; INTERFACES (MATERIALS); LANTHANUM COMPOUNDS; PERMITTIVITY; RAPID THERMAL ANNEALING; REACTION KINETICS; X RAY PHOTOELECTRON SPECTROSCOPY;

CHARGE DISTRIBUTION; INTERFACE TRAP; LANTHANUM OXIDE; VOLTAGE SHIFT;

THIN FILMS;

EID: 33746824954     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2218465     Document Type: Article

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