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Volumn 216, Issue 1-4 SPEC., 2003, Pages 252-257

Electronic structure and energy band offsets for ultrathin silicon nitride on Si(1 0 0)

Author keywords

Band offset; Defect density; Energy band gap; Photoelectron spectroscopy; Silicon nitride

Indexed keywords

BAND STRUCTURE; CHEMICAL VAPOR DEPOSITION; ELECTRONIC STRUCTURE; HETEROJUNCTIONS; INTERFACES (MATERIALS); SILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0038345965     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00377-5     Document Type: Conference Paper
Times cited : (33)

References (13)
  • 2
    • 0038280662 scopus 로고
    • V.I. Belyi, et al. (Eds.), Elsevier, Amsterdam, Chapter 6
    • V.A. Gritsenko, in: V.I. Belyi, et al. (Eds.), Silicon Nitride in Electronics, Elsevier, Amsterdam, 1988 (Chapter 6).
    • (1988) Silicon Nitride in Electronics
    • Gritsenko, V.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.