Energy-band alignments at LaAlO3 and Ge interfaces

Applied Physics Letters

Volumn 89, Issue 20, 2006, Pages

  Mi, Y Y ^a   Wang, S J ^b   Chai, J W ^b   Pan, J S ^b   Huan, A C H ^b   Ning, M ^a   Ong, C K ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRON ENERGY LEVELS; INTERFACES (COMPUTER); LANTHANUM COMPOUNDS;

BAND ALIGNMENTS; DIPOLES; PHOTOEMISSION SPECTROSCOPY; VALENCE BAND;

SEMICONDUCTING GERMANIUM;

EID: 33751084308     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2387986     Document Type: Article

References (21)

1. C. O. Chui, S. Rammanathan, B. B. Triplett, P. C. McIntyre, and K. C. Saraswat, IEEE Electron Device Lett. 23, 473 (2002).
2. J. W. Seo, Ch. Dieker, J.-P. Locquet, G. Mavrou, and A. Dimoulas, Appl. Phys. Lett. 87, 221906 (2005).
3. T. Maeda, T. Yasuda, M. Nishizawa, N. Miyata, Y. Morita, and S. Takagi, Appl. Phys. Lett. 85, 3181 (2004).
4. H. Kim, P. C. Mclntyre, C. O. Chui, K. C. Saraswat, and M. H. Cho, Appl. Phys. Lett. 85, 2902 (2004).
5. S. J. Wang, J. W. Chai, J. S. Pan, and A. C. H. Huan, Appl. Phys. Lett. 89, 022105 (2006).
6. A. Dimoulas, G. Vellianitis, G. Mavrou, E. K. Evangelou, and A. Sotiropoulos, Appl. Phys. Lett. 86, 032908 (2005).
7. M. Meuris, A. Delabie, S. Van Elshocht, S. Kubicek, P. Verheyen, B. De Jaeger, J. Van Steenbergen, G. Winderickx, E. Van Moorhem, R. L. Puurunen, B. Brijs, M. Caymax, T. Conard, O. Richard, W. Vandervorst, C. Zhao, S. De Gendt, T. Schram, T. Chiarella, B. Onsia, I. Teerlinck, M. Houssa, P. W. Mertens, G. Raskin, P. Mijlemans, S. Biesemans, and M. M. Heyns, Mater. Sci. Semicond. Process. 8, 203 (2005).
8. X. B. Lu, P. F. Lee, and J. Y. Dai, Appl. Phys. Lett. 86, 203111 (2005).
9. V. V. Afanas'ev and A. Stesmans, Appl. Phys. Lett. 84, 2319 (2004).
10. C. J. Först, K. Schwarz, and P. E. Blöchl, Phys. Rev. Lett. 95, 137602 (2005).
11. L. F. Edge, D. G. Schlom, S. A. Chambers, E. Cicerrella, J. L. Freeouf, B. Holländer, and J. Schubert, Appl. Phys. Lett. 84, 726 (2004).
12. P. Sivasubramani, M. J. Kim, B. E. Gnade, R. M. Wallace, L. F. Edge, D. G. Schlom, H. S. Craft, and J. -P. Maria, Appl. Phys. Lett. 86, 201901 (2005).
13. H. N. Alshareef, H. F. Luan, K. Choi, H. R. Harris, H. C. Wen, M. A. Quevedo-Lopez, P. Majhi, and B. H. Lee, Appl. Phys. Lett. 88, 112114 (2006).
14. Y. F. Dong, Y. P. Feng, S. J. Wang, and A. C. H. Huan, Phys. Rev. B 72, 045327 (2005).
15. E. A. Kraut, R. W. Grant, J. R. Waldrop, and S. P. Kowalczyk, Phys. Rev. Lett. 44, 1620 (1980).
16. E. A. Kraut, R. W. Grant, J. R. Waldrop, and S. P. Kowalczyk, Phys. Rev. B 28, 1965 (1983).
17. S. A. Chambers, Y. Liang, Z. Yu, R. Droopad, J. Ramdani, and K. Eisenbeiser, Appl. Phys. Lett. 0003-6951 10.1063/1.1310209 77, 1662 (2000); S. A. Chambers, Y. Liang, Z. Yu, R. Droopad, and J. Ramdani, J. Vac. Sci. Technol. A 19, 934 (2001).
18. S. A. Chambers, Y. Liang, Z. Yu, R. Droopad, J. Ramdani, and K. Eisenbeiser, Appl. Phys. Lett. 0003-6951 10.1063/1.1310209 77, 1662 (2000); S. A. Chambers, Y. Liang, Z. Yu, R. Droopad, and J. Ramdani, J. Vac. Sci. Technol. A 19, 934 (2001).
19. J. Robertson and B. Falabretti, J. Appl. Phys. 100, 014111 (2006).
20. G. Seguini, S. Spiga, E. Bonera, and M. Fancuilli, presented at the European Materials Research Society Meeting, Nice, May 2006 (unpublished).
21. P. W. Peacock and J. Robertson, J. Appl. Phys. 92, 4712 (2002).