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Volumn 67, Issue 1, 2002, Pages 115-123

Photoelectron emission from heterojunctions with intralayers: Band-offset changes vs. band-bending effects

(7) Horn, K a Moreno, M b,c Alonso, M b Horicke M c Hey, R c Sacedon J L b Ploog, K H c

a FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT (Germany)

b INSTITUTO DE CIENCIA DE MATERIALES DE MADRID (Spain)

c PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK (Germany)

Author keywords

Band bending; Band offset; Photoemission spectroscopy; Semiconductor heterojunctions

Indexed keywords

INTERFACES (MATERIALS); PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION; PHOTONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SUBSTRATES;

PHOTOELECTRON EMISSION;

HETEROJUNCTIONS;

EID: 0037009211 PISSN: 0042207X EISSN: None Source Type: Journal
DOI: 10.1016/S0042-207X(02)00198-7 Document Type: Conference Paper

Times cited : (5)

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