Oxidation of 6H silicon carbide in carbon containing atmosphere

Materials Science and Engineering: B

Volumn 61-62, Issue , 1999, Pages 485-489

  Christiansen, Kai ^a   Bassler, Michael ^a   Dalibor, Thomas ^a,b   Helbig, Reinhard ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b ABB SWITZERLAND LTD   (Switzerland)

Author keywords

Admittance spectroscopy; Density of interface states; MOS structure; Oxidation

Indexed keywords

CARBON DIOXIDE; CARBON MONOXIDE; DIFFUSION IN SOLIDS; ELECTRONIC DENSITY OF STATES; INTERFACES (MATERIALS); MOS DEVICES; OXIDATION; PARTIAL PRESSURE; PRESSURE EFFECTS; SILICA; SILICON CARBIDE;

ADMITTANCE SPECTROSCOPY;

SEMICONDUCTING SILICON COMPOUNDS;

OXIDATION; SPECTROSCOPY;

EID: 0033618688     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00458-9     Document Type: Article

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