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Volumn 83, Issue 1 SPEC. ISS., 2006, Pages 24-26
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High current capability of 3C-SiC vertical DMOSFETs
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Author keywords
3C SiC; Channel mobility; DMOSFET; Interface state density; On resistance
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Indexed keywords
CURRENT DENSITY;
EXTRAPOLATION;
LEAKAGE CURRENTS;
MOSFET DEVICES;
3C-SIC;
CHANNEL MOBILITY;
DMOSFET;
INTERFACE STATE DENSITY;
ON-RESISTANCE;
SILICON CARBIDE;
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EID: 30344454382
PISSN: 01679317
EISSN: None
Source Type: Journal
DOI: 10.1016/j.mee.2005.10.017 Document Type: Conference Paper |
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Times cited : (18)
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References (7)
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