Thermal oxidation of (0001) 4H-SiC at high temperatures in ozone-admixed oxygen gas ambient

Applied Physics Letters

Volumn 83, Issue 5, 2003, Pages 884-886

  Kosugi, Ryoji ^a   Fukuda, Kenji ^a   Arai, Kazuo ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GROUND STATE; MOS CAPACITORS; OXIDATION; OZONE; PYROLYSIS;

COLD-WALL OXIDATION;

SILICON CARBIDE;

EID: 0042967490     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1598621     Document Type: Article

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