Electrical characteristics of Al/SiO2/n-Si tunnel diodes with an oxide layer grown by rapid thermal oxidation

Solid State Electronics

Volumn 37, Issue 3, 1994, Pages 433-441

  Depas, M ^a   Van Meirhaeghe, R L ^a   Laflere W H ^a   Cardon, F ^a  

^a Laboratorium voor Kristallografie en Studie van de Vaste Stof Universiteit Gent   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ELECTRIC PROPERTIES; ELECTRIC VARIABLES MEASUREMENT; ELECTRON TUNNELING; ENERGY GAP; INTERFACES (MATERIALS); OXIDES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; THERMOOXIDATION;

CAPACITANCE-VOLTAGE MEASUREMENTS; CONDUCTANCE METHOD; INTERFACE TRAP DENSITY; OXIDE THICKNESS; POST METALLIZATION ANNEAL; RAPID THERMAL OXIDATION; SURFACE POTENTIAL; TRAPEZOIDAL TUNNEL BARRIER; ULTRATHIN OXIDE LAYERS;

TUNNEL DIODES;

EID: 0028400420     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(94)90009-4     Document Type: Article

References (35)

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5. Elimination and Generation of Si-SiO[sub 2] Interface Traps by Low Temperature Hydrogen Annealing