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Volumn 83, Issue 1 SPEC. ISS., 2006, Pages 185-188

Hetero- and homo-epitaxial growth of 3C-SiC for MOS-FETs

Author keywords

3C SiC; Anti phase boundary; Hetero epitaxy; Homo epitaxy; MOS FET; pn junction; Stacking fault

Indexed keywords

EPITAXIAL GROWTH; LEAKAGE CURRENTS; SEMICONDUCTOR DIODES; SILICON CARBIDE;

3C-SIC; ANTI-PHASE BOUNDARY; HETERO-EPITAXY; HOMO-EPITAXY; PN JUNCTION; STACKING FAULT;

MOSFET DEVICES;

EID: 30344458195 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2005.10.046 Document Type: Conference Paper

Times cited : (49)

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