Rapid oxidation of SiC using microwave-discharged O2 plasma at low temperatures (<300°C)

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 3 A, 2002, Pages

  Satoh, Masataka ^a   Shimada, Hisanori ^a   Nakamura, Tomonori ^a   Yanagihara, Sachiko ^a  

^a HOSEI UNIVERSITY   (Japan)

Author keywords

O2 plasma; Oxidation; SiC

Indexed keywords

INTERFACES (MATERIALS); LOW TEMPERATURE EFFECTS; MICROWAVES; OXYGEN; PLASMA APPLICATIONS; STOICHIOMETRY; THERMOOXIDATION; X RAY PHOTOELECTRON SPECTROSCOPY;

GATE DIELECTRICS;

SILICON CARBIDE;

EID: 0036508587     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.l233     Document Type: Article

References (14)

1. Silicon carbide