H2 surface treatment for gate-oxidation of SiC metal-oxide-semiconductor field effect transisitsors

Materials Science and Engineering: B

Volumn 61-62, Issue , 1999, Pages 472-474

  Ueno, Katsunori ^a   Asai, Ryuichi ^a   Tsuji, Takashi ^a  

^a FUJI ELECTRIC CO   (Japan)

Author keywords

4H SiC; Field effect mobility; Interface; MOSFET; Oxidation; Threshold

Indexed keywords

ANNEALING; CAPACITANCE; GATES (TRANSISTOR); HYDROGEN; INTERFACES (MATERIALS); MOSFET DEVICES; OXIDATION; SILICA; SILICON CARBIDE; SURFACE TREATMENT; THRESHOLD VOLTAGE;

FIELD EFFECT MOBILITY;

SEMICONDUCTING SILICON COMPOUNDS;

INTERFACE; OXIDATION;

EID: 0033618716     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00558-3     Document Type: Article

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