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Volumn 41, Issue 4 B, 2002, Pages 2516-2518

SiC/SiO2 structure formed at ∼ 200°C by heat treatment at 950°C having excellent electrical characteristics

Author keywords

Interface states; Low temperature oxidation; MOS; Perchloric acid; Silicon carbide; Silicon oxide

Indexed keywords

DECOMPOSITION; HEAT TREATMENT; NITROGEN; OXIDATION;

INTERFACE STATES; LOW-TEMPERATURE OXIDATION; PERCHLORIC ACID;

SILICON COMPOUNDS;

EID: 32444447081 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.41.2516 Document Type: Article

Times cited : (2)

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