Remote hydrogen microwave plasma CVD of silicon carbonitride films from a tetramethyldisilazane source. Part 2: compositional and structural dependencies of film properties

Chemical Vapor Deposition

Volumn 13, Issue 11, 2007, Pages 601-608

  Wrobel, Aleksander M ^a   Blaszczyk Lezak, Iwona ^a  

^a CENTRE OF MOLECULAR AND MACROMOLECULAR STUDIES   (Poland)

Author keywords

Density; Mechanical properties; Refractive index; Silicon carbonitride film

Indexed keywords

ABSORPTION; CARBON NITRIDE; CARBON STEEL; CHEMICAL VAPOR DEPOSITION; DENSITY (SPECIFIC GRAVITY); ELECTROMAGNETIC WAVES; FRICTION; HYDROGEN; LIGHT REFRACTION; MECHANICAL PROPERTIES; METALLIC FILMS; MICROWAVES; NITRIDES; NONMETALS; OPTICAL PROPERTIES; PLASMAS; REAL TIME SYSTEMS; REFRACTIVE INDEX; REFRACTOMETERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON; STAINLESS STEEL; STEEL; WEAR RESISTANCE;

ATOMIC RATIOS; CARBONITRIDE; DENSITY; FILM PROPERTIES; FRICTION COEFFICIENTS; INFRARED BANDS; INTEGRATED INTENSITIES; MICROWAVE PLASMA CVD; MICROWAVE PLASMAS; N FILMS; OPTICAL; SILICON CARBONITRIDE FILM; SILICON CARBONITRIDE FILMS; STRUCTURAL PARAMETERS; SUBSTRATE TEMPERATURES; SURFACE MECHANICAL PROPERTIES;

CRYSTAL ATOMIC STRUCTURE;

EID: 40549137031     PISSN: 09481907     EISSN: 15213862     Source Type: Journal    
DOI: 10.1002/cvde.200706587     Document Type: Article

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