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Thin Solid Films

Volumn 283, Issue 1-2, 1996, Pages 90-96

Ion-assisted deposition of C-N and Si-C-N films

(3) He, Zhigang a Carter, George a Colligon, John S a

a UNIVERSITY OF SALFORD (United Kingdom)

Author keywords

Deposition process; Growth mechanism; Ion bombardment; Silicon carbide; Silicon nitride

Indexed keywords

CHEMICAL BONDS; COMPOSITION; DEPOSITION; FILM GROWTH; HARDNESS; ION BOMBARDMENT; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON CARBIDE; SILICON NITRIDE; SPUTTER DEPOSITION; SYNTHESIS (CHEMICAL); X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICAL SHIFTS; GROWTH MECHANISM; HARDNESS MEASUREMENTS; ION ASSISTED DEPOSITION;

THIN FILMS;

EID: 0030233933 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/0040-6090(96)08556-2 Document Type: Article

Times cited : (67)

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